Non-topcoat resist design for immersion process at 32-nm node

Steven Wu; Aroma Tseng; Bill Lin; Chun Chi Yu; Bo-Jou Lu; Wen-Shiang Liao; Deyan Wang; Vaishali Vohra; Cheng Bai Xu; Stefan Caporale; George Barclay

doi:10.1117/12.775542

31 March 2008 Non-topcoat resist design for immersion process at 32-nm node

Steven Wu, Aroma Tseng, Bill Lin, Chun Chi Yu, Bo-Jou Lu, Wen-Shiang Liao, Deyan Wang, Vaishali Vohra, Cheng Bai Xu, Stefan Caporale, George Barclay

Author Affiliations +

Proceedings Volume 6923, Advances in Resist Materials and Processing Technology XXV; 692307 (2008) https://doi.org/10.1117/12.775542
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

At the 32nm node, the most important issue for mass production in immersion lithography is defectivity control. Many methods have been studied to reduce post-exposure immersion defects. Although a topcoat process demonstrates good immersion defect prevention, a topcoat-less resist process is an attractive candidate for immersion lithography due to cost reduction from a simplified process. In this paper we took the innovative approach of chemically designing an internal self-assembling barrier material that creates a thin embedded layer which functions as a topcoat. Data will be presented on this novel self assembly concept, illustrating the control of leaching, contact angle and immersion defects. Several optimized process flows with non-topcoat resists were also studied to decrease the amount of immersion defects. This study was used to verify the capability of a topcoat-less immersion process to achieve the low-defectivity levels required for 32nm node production.

Citation Download Citation

Steven Wu, Aroma Tseng, Bill Lin, Chun Chi Yu, Bo-Jou Lu, Wen-Shiang Liao, Deyan Wang, Vaishali Vohra, Cheng Bai Xu, Stefan Caporale, and George Barclay "Non-topcoat resist design for immersion process at 32-nm node", Proc. SPIE 6923, Advances in Resist Materials and Processing Technology XXV, 692307 (31 March 2008); https://doi.org/10.1117/12.775542

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