Paper
16 April 2008 Improvements on the simulation of microscopic images for the defect detection of nanostructures
Stephan Rafler, Thomas Schuster, Karsten Frenner, Wolfgang Osten, Uwe Seifert
Author Affiliations +
Abstract
The optical defect identification on wafer still remains a useful tool, even if the structure sizes have the order of magnitude of the used wavelengths of the light and far beyond it. Structures are not resolved in this way, but one receives a contrast in the microscopic image of a defect with a certain illumination configuration. We show simulations of such images at structures relevant for practice and present methods to accelerate the computations. These accelerations can cause a loss of accuracy, but they can give hints to useful illumination configurations.
© (2008) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Stephan Rafler, Thomas Schuster, Karsten Frenner, Wolfgang Osten, and Uwe Seifert "Improvements on the simulation of microscopic images for the defect detection of nanostructures", Proc. SPIE 6922, Metrology, Inspection, and Process Control for Microlithography XXII, 692215 (16 April 2008); https://doi.org/10.1117/12.772498
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Cited by 1 scholarly publication.
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KEYWORDS
Defect detection

Etching

Semiconducting wafers

Diffraction

Nanostructures

Scanning electron microscopy

Wafer-level optics

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