Model-based pupil-fill optimization for the SEMATECH Berkeley EUV microfield exposure tool

Jonathan S. Nation; Patrick P. Naulleau

doi:10.1117/12.774366

21 March 2008 Model-based pupil-fill optimization for the SEMATECH Berkeley EUV microfield exposure tool

Jonathan S. Nation, Patrick P. Naulleau

Proceedings Volume 6921, Emerging Lithographic Technologies XII; 69213J (2008) https://doi.org/10.1117/12.774366
Event: SPIE Advanced Lithography, 2008, San Jose, California, United States

Abstract

Extreme ultraviolet (EUV) resist development has been enabled over the past few years in large part by high numerical aperture (NA) exposure tools such as the 0.3-NA microfield exposure tools (METs) at SEMATECH and Intel. Of these tools, the SEMATECH Berkeley MET tool is unique in its ability to provide lossless pupil fill control enabling extremely low k₁ printing (down to 0.25). It is well known that illumination settings can be tailored to optimize printing performance for particular features. The optimal illumination settings, however, depend not only on the feature type but also on the specifics of the pupil function, including phase (or aberrations) and amplitude (or pupil obscurations). Here, aerial image modeling is used to study the optimal illumination conditions for the SEMATECH Berkeley MET tool as a function of feature size and type. The modeling accounts for the known pupil function (amplitude and phase) of the optic.

Citation Download Citation

Jonathan S. Nation and Patrick P. Naulleau "Model-based pupil-fill optimization for the SEMATECH Berkeley EUV microfield exposure tool", Proc. SPIE 6921, Emerging Lithographic Technologies XII, 69213J (21 March 2008); https://doi.org/10.1117/12.774366

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