Paper
21 December 2007 A 6-18.5 GHz dynamic frequency divider in 0.25μm SOI CMOS
Author Affiliations +
Proceedings Volume 6798, Microelectronics: Design, Technology, and Packaging III; 679806 (2007) https://doi.org/10.1117/12.758883
Event: SPIE Microelectronics, MEMS, and Nanotechnology, 2007, Canberra, ACT, Australia
Abstract
An 18.5 GHz divide-by-four digital frequency divider has been implemented in 0.25μm silicon-on-sapphire CMOS with a power dissipation of 41mW, supply voltage of 2.75V and size of 40×60μm. The design utilises two cascaded divide-by-two 6 transistor dividers. A buffer is used at the output of the first stage to minimise the capacitive load and restore the signal amplitude for the second stage. This significantly increases the operating speed of the circuit. An optimisation design method is proposed for sizing the transistors that uses the amplitude of the output voltage as a metric for the divider speed.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Leigh Milner "A 6-18.5 GHz dynamic frequency divider in 0.25μm SOI CMOS", Proc. SPIE 6798, Microelectronics: Design, Technology, and Packaging III, 679806 (21 December 2007); https://doi.org/10.1117/12.758883
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KEYWORDS
Transistors

Silicon

Capacitance

Oscillators

Clocks

CMOS technology

Device simulation

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