Paper
30 October 2007 Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems
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Abstract
The purpose of paper is to investigate the impact of mask blank flatness on critical dimension uniformity (CDU) and depth of focus (DOF) in the wafer printing process with a test pattern designed for 65nm node technology. In this experiment we use 3 test masks with different flatness (0.3T, 0.5T and 1T), and the same test pattern array. The mask flatness was measured with a Tropel® UltraFlatTM 200, and the focus error is extracted from the CD data of the focus and energy matrix (FEM) analysis. The goal of the study is to quantify the mask flatness influence on the high-numerical aperture (NA) lithographic process.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher Lee, Chia Wen Chang, Tomas Chin, Richard Lu, Steven Fan, Derek Chen, Gordon Chan, and Torey Huang "Evaluation of the effect of mask-blank flatness on CDU and DOF in high-NA systems", Proc. SPIE 6730, Photomask Technology 2007, 67300D (30 October 2007); https://doi.org/10.1117/12.746614
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KEYWORDS
Photomasks

Semiconducting wafers

Lithography

Finite element methods

Critical dimension metrology

Error analysis

Fluctuations and noise

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