Distributed and adaptive fracturing for sub-90-nm MDP

Ravi Pai; Mark Pereira; Nageswara Rao; C. S. Manu; D. S. S. Bhardwaj; Sandip Dutta

doi:10.1117/12.729010

15 May 2007 Distributed and adaptive fracturing for sub-90-nm MDP

Ravi Pai, Mark Pereira, Nageswara Rao, C. S. Manu, D. S. S. Bhardwaj, Sandip Dutta

Proceedings Volume 6607, Photomask and Next-Generation Lithography Mask Technology XIV; 66072R (2007) https://doi.org/10.1117/12.729010
Event: Photomask and Next-Generation Lithography Mask Technology XIV, 2007, Yokohama, Japan

Abstract

In the UDSM regime of 65 nm and below, a majority of mask layers require Resolution Enhancement Techniques (RET) to enhance their printability on the wafer. The RET has a huge amount of impact on the layout data both in terms of size and the polygonal data characteristics. The Optical Proximity Correction (OPC) step would reduce the original layout hierarchy by a large extent. Moreover, OPC would either add a large number of geometries to the layout data or would split the original edges in the layout geometries into segments. As a result, the size of the layout data file would increase manifold which could be several hundreds of gigabytes for a single mask layer. The growth in layout data size along with more complex polygons introduced during OPC necessitates that the fracturing tool produce higher quality fracturing with less turn-around-time (TAT) during Mask Data Preparation (MDP) as well as actual mask-write by the EB machine. The VSB (Variable Shaped Beam) machine differs from traditional raster based e-beam machines in many ways. The VSB machine writing time as well as the quality of the masks written by it is significantly affected by the quality of fracturing compared to a raster based mask writer. The two requirements, namely, of reducing the TAT for MDP and increasing the quality of the mask written by mask writer usually counteract with each other. In this paper, we propose a scheme that addresses both the issues.

Citation Download Citation

Ravi Pai, Mark Pereira, Nageswara Rao, C. S. Manu, D. S. S. Bhardwaj, and Sandip Dutta "Distributed and adaptive fracturing for sub-90-nm MDP", Proc. SPIE 6607, Photomask and Next-Generation Lithography Mask Technology XIV, 66072R (15 May 2007); https://doi.org/10.1117/12.729010

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
12 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Databases

Fluorescence correlation spectroscopy

Resolution enhancement technologies

Vestigial sideband modulation

Optical proximity correction

Neodymium

Show All Keywords

Keywords/Phrases

Search In:

Publication Years