Paper
26 March 2007 Contamination and particle control system in immersion exposure tool
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Abstract
Water-based immersion technology has overcome various obstacles and is approaching the mass production phase. Canon is in the process of developing an ArF immersion exposure tool, FPA-7000AS7 (NA>1.3), to meet both mass production of the 65nm HP and development of the 45nm HP, which starts in 2007. In the Canon immersion nozzle, there is little influence of vibration on the lens and the stage, and particle generation from the nozzle during treatment of the nozzle in the manufacturing process has successfully been prevented. We evaluated contamination due to leaching and cleaning technology with a test bench. Contamination due to PAG (Photo-acid Generator) leaching from resist to water could be completely eliminated by dipping it into a cleaning fluid. With periodic cleaning, it is possible to keep the projection lens clean and to prevent particle generation from the immersion nozzle. The defect was evaluated with FPA-6000AS4i (NA0.85) that had the same type of immersion nozzle as that of FPA-7000AS7. The level of defect density was stable in a continuous exposure process of 25 wafers with a developer-soluble topcoat. The defect density was 0.030/cm2 with a topcoat-less resist.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masamichi Kobayashi, Hitoshi Nakano, Mikio Arakawa, Masayuki Tanabe, Koji Toyoda, Takahito Chibana, Yoichi Matsuoka, and Youji Kawasaki "Contamination and particle control system in immersion exposure tool", Proc. SPIE 6520, Optical Microlithography XX, 652014 (26 March 2007); https://doi.org/10.1117/12.711289
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Cited by 2 scholarly publications.
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KEYWORDS
Particles

Contamination

Semiconducting wafers

Bridges

Defect inspection

Inspection

Water

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