New ArF resist introduction for process through-put enhancement

Myoung Soo Kim; Hae-Wook Ryu; Hong-Goo Lee; Hak-Joon Kim; Kew-Chan Shim; Myung-Goon Gil; Hyo-Sang Kang

doi:10.1117/12.711022

21 March 2007 New ArF resist introduction for process through-put enhancement

Myoung Soo Kim, Hae-Wook Ryu, Hong-Goo Lee, Hak-Joon Kim, Kew-Chan Shim, Myung-Goon Gil, Hyo-Sang Kang

Proceedings Volume 6519, Advances in Resist Materials and Processing Technology XXIV; 65193G (2007) https://doi.org/10.1117/12.711022
Event: SPIE Advanced Lithography, 2007, San Jose, California, United States

Abstract

In this study, the four ArF resists having methacrylate structure have been evaluated to check the reliability of process through-put enhancement in track by applying the different baking time. The dense L/S and isolated patterns of T80nm and T66nm node device are investigated for these models. The chemical properties of applied resists are slightly different for each other in the respect of protecting ratio and molecular weight. The applied resist thickness are 2,000Å and 1,700Å for the patterning of T80nm and T66nm node device, respectively. The process margins of evaluated patterns for T80nm node device show the almost similar results for DOF and E/L for 90s, 60s and 45s baking time conditions. And the LER of these patterns also is not much changed by the different baking time conditions. Form the experimental results, it is confirmed that the less baking time below 60s for T80nm node pattern is available to apply for enhancing the through-put in litho process. The process margins and LER of evaluated patterns for T66nm node device are slightly affected by their chemical properties like molecular weight and protecting ratio of resin for the different baking time conditions. However, the more improved pattern profile and process margin can be obtained by optimizing the chemical properties in the certain experimental range. And also, it is found that the less baking time below 45s can be applied for the reliable patterning process of T80nm and T66nm node device through the crosssectional SEM views with the more optimizing the material compositions.

Citation Download Citation

Myoung Soo Kim, Hae-Wook Ryu, Hong-Goo Lee, Hak-Joon Kim, Kew-Chan Shim, Myung-Goon Gil, and Hyo-Sang Kang "New ArF resist introduction for process through-put enhancement", Proc. SPIE 6519, Advances in Resist Materials and Processing Technology XXIV, 65193G (21 March 2007); https://doi.org/10.1117/12.711022

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KEYWORDS

Line edge roughness

Optical lithography

Photoresist processing

Instrument modeling

Industrial chemicals

Reliability

Semiconducting wafers

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