Mr. Hak Joon Kim Profile

Hak Joon Kim

Senior Research Enginner at Hynix Semiconductor Inc

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Author

Publications (8)

Proceedings Article | 26 March 2008 Paper

The study of defect control and patterning performance for top coating free resist process

Myoung-Soo Kim, Hun-Rok Jung, Hae-Wook Ryu, Hong-Goo Lee, Sung-Mok Hong, Hak-Joon Kim, Sung-Nam Park, Myung-Goon Gil, Hyo-Sang Kang

Proceedings Volume 6923, 69231T (2008) https://doi.org/10.1117/12.772471

KEYWORDS: Photoresist processing, Coating, Optical lithography, Scanners, Contamination, Semiconducting wafers, Materials processing, Industrial chemicals, Line edge roughness, Semiconductors

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Proceedings Article | 21 March 2007 Paper

New ArF resist introduction for process through-put enhancement

Myoung Soo Kim, Hae-Wook Ryu, Hong-Goo Lee, Hak-Joon Kim, Kew-Chan Shim, Myung-Goon Gil, Hyo-Sang Kang

Proceedings Volume 6519, 65193G (2007) https://doi.org/10.1117/12.711022

KEYWORDS: Line edge roughness, Optical lithography, Photoresist processing, Instrument modeling, Reliability, Semiconducting wafers, Industrial chemicals, Semiconductors, Scanning electron microscopy, Aerospace engineering

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Proceedings Article | 29 March 2006 Paper

Implantation blocking characteristics study of organic BARC materials

Myoung-Soo Kim, Jae-Wook Seo, Kew-Chan Shim, Seung-Woo Jin, Hak-Joon Kim, Myung-Goon Gil, Yong-Wook Song

Proceedings Volume 6153, 61532N (2006) https://doi.org/10.1117/12.657317

KEYWORDS: Etching, Coating, Semiconducting wafers, Boron, Chemical analysis, Chromophores, Reflectivity, Silicon, Control systems, Ions

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Proceedings Article | 4 May 2005 Paper

Optimization of 248nm bottom anti-reflective coatings with thin film and high etch rate on real device

MyoungSoo Kim, HakJoon Kim, KewChan Shim, JeHa Jeon, MyungGoon Gil, YongWook Song, Tomoyuki Enomoto, Takahiro Sakaguchi, Yasuyuki Nakajima

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.599434

KEYWORDS: Reflectivity, Photoresist materials, Silicon, Etching, Semiconducting wafers, Coating, Oxides, Thin films, Plasma etching, Semiconductors

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Proceedings Article | 14 May 2004 Paper

Application of new thin BARC technology for KrF lithography at 80-nm node device

Myoung-Soo Kim, Kew-Chan Shim, Hak-Joon Kim, Ki-Sung Kwon, Hong-Goo Lee, Chul-Seung Lee, Myung-Goon Gil, Yong-Wook Song

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.536159

KEYWORDS: Silicon, Optical lithography, Reflectivity, Oxides, Lithography, Coating, Photoresist processing, Semiconducting wafers, Semiconductors, Line edge roughness

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Proceedings Article | 12 June 2003 Paper

Diffusion parameter analysis for chemical amplification resists as a function of resist process

Myoung-Soo Kim, Seung-Weon Paek, Dae-Sub Kwak, Hak-Joon Kim, Chul-Seung Lee, Myung-Goon Gil, Yong-Wook Song

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485065

KEYWORDS: Diffusion, Chemical analysis, Photoresist processing, Coating, Photomasks, Lithography, Calibration, Cadmium, Semiconducting wafers, Phase shifts

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Proceedings Article | 24 July 2002 Paper

Reflow process stabilization by chemical characteristics and process conditions

Myoung-Soo Kim, Jeong-Hyun Park, Hak-Joon Kim, Il-Hyung Kim, Jae-Ha Jeon, Myung-Goon Gil, Bong-Ho Kim

Proceedings Volume 4690, (2002) https://doi.org/10.1117/12.474277

KEYWORDS: Photoresist processing, Etching, Optical lithography, Coating, Chemical reactions, Industrial chemicals, Electroluminescence, Semiconducting wafers, Oxides, Reliability

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Proceedings Article | 24 August 2001 Paper

Investigation of electron beam stabilization of 193-nm photoresists

Myoung-Soo Kim, Jong-Woon Park, Hak-Joon Kim, Bum-Jin Jun, Myung-Goon Gil, Bong-Ho Kim, Matthew Ross, William Livesay

Proceedings Volume 4345, (2001) https://doi.org/10.1117/12.436905

KEYWORDS: Etching, Electron beams, Photoresist processing, Surface roughness, Refraction, 193nm lithography, Scanning electron microscopy, Monochromatic aberrations, Lithography, Photoresist materials

Read Abstract +

193nm lithography is a promising candidate for the fabrication of microelectronic devices at the 130nm design rule and below. With smaller feature sizes, below 130nm, reduced resist thickness is essential because of the pattern collapse issues at high aspect ratios and the limited depth of focus with 193nm lithography tools. However, ArF resists have shown problems with etch selectivity, especially with the thin resist layers necessary. Additionally, pattern slimming during CD-SEM measurement, due to the nature of the resist chemistry, is an issue with feature stability after patterning. At present, many studies have been performed for improving the etch selectivity of resists and addressing line slimming issues. In this study, the electron beam stabilization process has been applied for improving the etch selectivity of resist patterns having an aspect ratio less than 3.0. The electron beam stabilization has been applied to two different ArF resist types; acrylate and cyclic-olefin- maleic-anhydride (COMA), which have been evaluated with respect to materials properties, etch selectivity, and line slimming performance as a function of electron beam dose and etch condition. Film shrinkage and the change in index of refraction were monitored as a function of stabilization condition. The chemical properties were characterized before and after electron beam stabilization using FTIR analysis. Blanket resist etch rate studies were performed as a function of stabilization condition for each resist type. Cross- sectional views of resist patterns after etch processing were also investigated to evaluate the improvement in etch resistance provided by the electron beam process. CD SEM measurements were performed to evaluate the impact of the stabilization process on the patterned features. The issue of line slimming has also been evaluated, with and without electron beam stabilization, for the different ArF resist materials considered. The results were compared with a KrF resist currently used in production. Based on the experimental results, the electron beam process provides a method for improving etch selectivity and reducing line slimming issues of ArF resists.

Showing 5 of 8 publications

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