Paper
9 February 2007 Nano patterning fabrication by low energy microcolumn lithography
Takatoshi Yoshimoto, Seok Hyun Hwang, Kyong Hon Kim, Do Jin Seong, Dea Wook Kim, Young Chul Kim, Seung Jun Ahn, Ho Seob Kim
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Abstract
Nano-pattering process by low-voltage electron beam lithography based on microcolumn with beam energy of 500 eV has been developed. Low kV exposure provides the advantages of high sensitivity, reduced charging, and a lack of proximity and heating effects. However a low-voltage electron beam has very thin penetration range. At 500 V, the penetration range is less than 20 nm, while typical resist thickness is > 200 nm. A resist process with bilayer scheme, 17 nm-thick PMMA resist on 100 nm-thick SiO2 layer, and wet etch method was demonstrated for 250 nm line patterns transfer to Si substrate. The process was applied to fabricate periodic grating patterns on a silicon substrate. The results of nano-pattern process by low energy microcolumn lithography will be discussed in detail.
© (2007) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takatoshi Yoshimoto, Seok Hyun Hwang, Kyong Hon Kim, Do Jin Seong, Dea Wook Kim, Young Chul Kim, Seung Jun Ahn, and Ho Seob Kim "Nano patterning fabrication by low energy microcolumn lithography", Proc. SPIE 6476, Optoelectronic Integrated Circuits IX, 647612 (9 February 2007); https://doi.org/10.1117/12.707374
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Cited by 3 scholarly publications.
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KEYWORDS
Electron beam lithography

Lithography

Polymethylmethacrylate

Silicon

Electron beams

Monte Carlo methods

Photoresist processing

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