Development of SiO2/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctions

Sucheta Gorwadkar; Toshimi Wada; Jun-ichi Shirakashi; Hiroshi Hiroshima; Kenichi Ishii; Masanori Komuro

doi:10.1117/12.309591

5 June 1998 Development of SiO₂/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctions

Sucheta Gorwadkar, Toshimi Wada, Jun-ichi Shirakashi, Hiroshi Hiroshima, Kenichi Ishii, Masanori Komuro

Proceedings Volume 3331, Emerging Lithographic Technologies II; (1998) https://doi.org/10.1117/12.309591
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

The Electron Beam (EB) direct writing of a SiO₂ thin film is one of the promising methods to realize sub-10nm scale patterning. These ultrafine dimensions are required only when we want to observe quantum effects in the devices or to fabricate devices which operate on quantum phenomenon. However, in order to apply a SiO₂ resist or other Si- based inorganic resists in quantum device fabrication, it is necessary to develop a process for them, first. In this paper, we describe the Si-technology compatible process developed for the Si-based inorganic EB resist made of SiO₂ and c-Si layers. The process is optimized for 10-nm scale patterning. Further the developed process is used to demonstrate the fabrication of ultrafine Metal-insulator- metal tunnel junctions to be applicable to metallic devices operating on quantum effects, especially, the Single Electron Tunneling effect. So far, using this process, the Ti-TiOx-Ti overlapping type tunnel junction structures with minimum size approximately 9 nm X 9 nm could be fabricated successfully. Recently, we have applied this process to demonstrate lateral type, Ti-Air gap-Ti, tunnel junctions in which we could clearly observe a single electron coulomb blockage effect at approximately 160 K.

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Sucheta Gorwadkar, Toshimi Wada, Jun-ichi Shirakashi, Hiroshi Hiroshima, Kenichi Ishii, and Masanori Komuro "Development of SiO₂/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctions", Proc. SPIE 3331, Emerging Lithographic Technologies II, (5 June 1998); https://doi.org/10.1117/12.309591

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KEYWORDS

Metals

Photoresist processing

Etching

Polymethylmethacrylate

Oxidation

Remote sensing

Silicon

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