Supercritical CO<sub>2</sub> for high-resolution photoresist development

Nelson Felix; Kousuke Tsuchiya; Camille Man Yin Luk; Christopher K. Ober

doi:10.1117/12.656523

29 March 2006 Supercritical CO₂ for high resolution photoresist development

Nelson Felix, Kousuke Tsuchiya, Camille Man Yin Luk, Christopher K. Ober

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61534B (2006) https://doi.org/10.1117/12.656523
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Today's conventional microelectronic fabrication processes are able to produce features in the 100nm range or lower. However, tighter regulation of toxic chemical release, as well as the increasing energy cost associated with treating rinse water, means that the semiconductor industry is primed for the adoption of alternative solvent processes. Supercritical CO₂ (scCO₂) is a promising candidate as a replacement solvent. It is inexpensive, environmentally benign, combines the best properties of both a gas and liquid and can be easily separated from solutes. We have recently shown scCO₂ to be a prime replacement solvent for photoresist development, and have formulated photoresists for both positive and negative tone development processes. We demonstrate the solubility of small non-polymeric, molecular glass compounds in supercritical CO₂. Molecular glasses form amorphous films on planar substrates and may show excellent solubility in scCO₂ without the incorporation of fluorine or silicon. Using a phenolic molecular glass, line-space features of 50 nm were developed in scCO₂.

Citation Download Citation

Nelson Felix, Kousuke Tsuchiya, Camille Man Yin Luk, and Christopher K. Ober "Supercritical CO₂ for high resolution photoresist development", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534B (29 March 2006); https://doi.org/10.1117/12.656523

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