Paper
15 April 2011 Solvent development processing of chemically amplified resists: chemistry, physics, and polymer science considerations
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Abstract
Solvent development of chemically amplified (CA), negative tone photoresists depends on several factors including molecular weight of the photoresist, the strength of polymer-solvent interactions, and the strength of polymer-polymer interactions in the undeveloped regions. Absent are the ionic interactions present in the aqueous base development of CA resists that greatly aids dissolution and image contrast. In its place, strong hydrogen bonding of the exposed photoresist leads to effective resistance to dissolution in non-polar developers. These effects are discussed in the context of Flory- Huggins theory. As part of a study of low environmental impact developers several, non-polar solvents have been investigated with negative tone, chemically amplified photoresists. These include supercritical CO2, hydrofluoroethers and silicone fluids. Each of these solvents has low surface energy, unique dissolution characteristics and is capable of developing sub-50 nm patterns. Performance aspects of these developers will be described.
© (2011) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Christopher K. Ober, Christine Ouyang, Jin-Kyun Lee, and Marie Krysak "Solvent development processing of chemically amplified resists: chemistry, physics, and polymer science considerations", Proc. SPIE 7972, Advances in Resist Materials and Processing Technology XXVIII, 797205 (15 April 2011); https://doi.org/10.1117/12.882959
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Cited by 2 scholarly publications.
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KEYWORDS
Photoresist developing

Polymers

Photoresist materials

Silicon

Carbon dioxide

Line edge roughness

Molecules

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