Paper
29 March 2006 Resist dissolution behavior according to protecting group in polymer
Kwanghwyi Im, Jin Jegal, Jungkook Park, Deogbae Kim, Jaehyun Kim
Author Affiliations +
Abstract
In DUV CAR resists, deprotecting reaction and dissolution behavior depend upon the bulkiness and activation energy of protecting group. These factors have influences on resist performance (resolution, focus and exposure latitude margin, line width roughness). For further understanding this behavior, we investigated the dissolution parameters of resist related to the bulkiness, activation energy of protecting group, and we confirmed their effects on the resist performance using lithography evaluation. We will report and discuss the effect of structure and chemical properties of each protecting group on the dissolution behavior of resist in detail in this paper.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kwanghwyi Im, Jin Jegal, Jungkook Park, Deogbae Kim, and Jaehyun Kim "Resist dissolution behavior according to protecting group in polymer", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533Q (29 March 2006); https://doi.org/10.1117/12.655458
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers

Line width roughness

Lithography

Electroluminescence

Deep ultraviolet

Photomasks

Photoresist processing

Back to Top