Mr. Deog-Bae Kim Profile

Deog-Bae Kim

at Dongjin Semichem Co Ltd

SPIE Involvement:

Author

Publications (24)

Proceedings Article | 23 March 2010 Paper

Measurement of EUV resists performances RLS by DUV light source

Jeongsik Kim, Jae-Woo Lee, Deogbae Kim, Jaehyun Kim

Proceedings Volume 7636, 76362Y (2010) https://doi.org/10.1117/12.846518

KEYWORDS: Diffusion, Polymers, Extreme ultraviolet lithography, Line width roughness, Extreme ultraviolet, Deep ultraviolet, Line edge roughness, Optical lithography, Semiconducting wafers, Chemically amplified resists

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Proceedings Article | 1 April 2009 Paper

Analysis of molecular resist distribution in a resist film by using x-ray reflectivity

Jeongsik Kim, Jae-Woo Lee, Deogbae Kim, Jaehyun Kim, Sung-Il Ahn, Wang-Cheol Zin

Proceedings Volume 7273, 72732W (2009) https://doi.org/10.1117/12.814449

KEYWORDS: X-rays, Reflectivity, Glasses, Line width roughness, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Chemical analysis, Molecular interactions, Polymers

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Proceedings Article | 4 December 2008 Paper

Influences of various defects on extreme ultra-violet mask

Eun-Jin Kim, Jee-Hye You, Jung-Youl Lee, Deog-Bae Kim, Jae-Hyun Kim, Hye-Keun Oh

Proceedings Volume 7140, 71401N (2008) https://doi.org/10.1117/12.804570

KEYWORDS: Photomasks, Extreme ultraviolet, Extreme ultraviolet lithography, Refractive index, Carbon, Ruthenium, Ultraviolet radiation, Lithography, Silicon, Molybdenum

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Proceedings Article | 3 April 2007 Paper

Modified polymer architecture for immersion lithography

Sang Soo Kim, Jeong Woo Kim, Jung Youl Lee, Seung Keun Oh, Sang Hyang Lee, Jung Woo Kim, Jae Woo Lee, Deog bae Kim, Jaehyun Kim, Keun Do Ban, Cheol Kyu Bok, Seoung-Chan Moon

Proceedings Volume 6519, 65191W (2007) https://doi.org/10.1117/12.711657

KEYWORDS: Polymers, Polymerization, Line width roughness, Immersion lithography, Palladium, Line edge roughness, Photoresist processing, Promethium, Polymer thin films, Semiconducting wafers

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Proceedings Article | 23 March 2007 Paper

Polymer structure modifications for immersion leaching control

Sang Hyang Lee, Jung Woo Kim, Jeong Woo Kim, Seung Keun Oh, Chan Sik Park, Jung Youl Lee, Sang Soo Kim, Jae Woo Lee, Deogbae Kim, Jaehyun Kim, Keun Do Ban, Cheol Kyu Bok, Seung Chan Moon

Proceedings Volume 6519, 651925 (2007) https://doi.org/10.1117/12.711889

KEYWORDS: Polymers, Semiconducting wafers, Fluorine, Immersion lithography, Semiconductors, Polymer thin films, Photoresist materials, Lithography, Manufacturing, Silicon

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Proceedings Article | 23 March 2007 Paper

Effect of deprotection activation energy on lithographic performance of EUVL resist

Sang-Jeoung Kim, Geun-Jong Yu, Jung-Yeol Lee, Hyun-Jin Kim, Jae-Woo Lee, Deog-Bae Kim, Yool Kang, Jaehyun Kim

Proceedings Volume 6519, 651947 (2007) https://doi.org/10.1117/12.711951

KEYWORDS: Polymers, Line edge roughness, Lithography, Diffusion, Extreme ultraviolet lithography, Molecules, Image resolution, Photoresist processing, Reflectivity, Image processing

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Proceedings Article | 11 April 2006 Paper

Polymer structure modifications for immersion leaching and watermark control

Jae Woo Lee, Seung Keun Oh, Jung Woo Kim, Sang Hyang Lee, Young Ho Jeong, Sang Soo Kim, Myoung Hwan Park, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Seung-Chan Moon

Proceedings Volume 6153, 615321 (2006) https://doi.org/10.1117/12.655477

KEYWORDS: Polymers, Molecules, Digital watermarking, Photoresist processing, Liquids, Polymer thin films, Water, Optical lithography, Molecular interactions, Glasses

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Immersion materials have to overcome immersion-issues for successful wet process introduction to semiconductor mass production. Component-leaching issue is one of the most influential wet process huddles, which is related to immersion-liquid and projection lens contamination as well as resist patterning performances. In this paper, we will introduce our experimental results of leaching blocking effects resulted from the modification of polymer and additive structures and from the application of top surface blocking layers. PAG-leaching level of resist film formed of low Tg resin shows the highest meanwhile that of high Tg resin is the smallest leaching value. The interaction forces between additives and resin platforms are the most important to prevent additives leaching to immersion liquid. We have tested 3 different types of resin structures to modify the interaction forces between resin platform and resist components especially PAG molecules and photo-generated acid molecules. We changed 2-hydroxyethyl methacrylate(2-HEMA) contents to be 5, 10, 15% in our base resin, COMA-acrylate hybrid system to modify the hydrophilicity of resist platforms. By mimicking immersion process to obtain wet-performance of their resists we have obtained relative value of component-leaching. Interaction-force between resist platform and PAG was seemed to be largest when resist component-leaching is least so that the pattern profiles become to be vertical. It was appeared that the 5% 2-HEMA containing resin and TPS-Nonaflate PAG system showed the best performance because of its low leaching resulted from their strong interaction forces. Another polymer parameter to determine the component-diffusivity is glass transition temperature, Tg. Low Tg means high mobility of resin by small thermal energy due to high free volume contents inside of the resist film which can act as diffusion pathways of resist components. 10% MA resin system shows the lowest Tg, around 140 degrees C and the most serious T-topping profiles. Defectivity issue becomes more important in immersion process, which is most related to the partial leaching by residual water and resulted in watermark defects. We evaluated the relative easiness of watermark formation on different resist films by correlations between static and dynamic contact angles. We made 2 different resist films composed of 2 different water-repellent functional group monomers. Static contact angles of developer as well as DI water were measured. It was found indirectly that amphiphilicity of resist film surface makes positive effect on watermarks formation, that is, more hydrophobic and more developer-philic resist film remains less residual water droplets.

Proceedings Article | 29 March 2006 Paper

Resist dissolution behavior according to protecting group in polymer

Kwanghwyi Im, Jin Jegal, Jungkook Park, Deogbae Kim, Jaehyun Kim

Proceedings Volume 6153, 61533Q (2006) https://doi.org/10.1117/12.655458

KEYWORDS: Polymers, Line width roughness, Lithography, Electroluminescence, Deep ultraviolet, Photoresist processing, Photomasks, Scanning electron microscopy, Temperature metrology, Chemically amplified resists

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Proceedings Article | 29 March 2006 Paper

Parameter investigation of PEB sensitivity

Seung Keun Oh, Eun Kyung Son, Chan Sik Park, Jung Youl Lee, Jeong Woo Kim, Jae Woo Lee, Deog Bae Kim, Jaehyun Kim, Geunsu Lee, Seung-Chan Moon

Proceedings Volume 6153, 615335 (2006) https://doi.org/10.1117/12.655449

KEYWORDS: Polymers, Diffusion, Critical dimension metrology, Molecules, Photoresist processing, Monochromatic aberrations, Semiconducting wafers, Semiconductors, Lithography, Photoresist materials

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Proceedings Article | 4 May 2005 Paper

Studies on leaching of photoresist components by water

Seung Keun Oh, Jong Yong Kim, Young Ho Jung, Jae Woo Lee, Deog Bae Kim, Jaehyun Kim, Geun Su Lee, Sung Koo Lee, Keun Do Ban, Jae Chang Jung, Cheol Kyu Bok, Seung Chan Moon

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.598618

KEYWORDS: Polymers, Water, Photoresist materials, Immersion lithography, Polymer thin films, Diffusion, Liquids, Photoresist processing, Refractive index, Optical lithography

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Proceedings Article | 14 May 2004 Paper

PEB sensitivity variation of 193-nm resist according to activation energy of protection groups

Seung Keun Oh, Jong Yong Kim, Jae Woo Lee, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Jae Chang Jung, Cheol Kyu Bok, Ki Soo Shin

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534665

KEYWORDS: Polymers, Critical dimension metrology, Diffusion, Polymer thin films, Temperature metrology, Photoresist materials, Photoresist processing, Semiconducting wafers, Semiconductors, Lithography

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Proceedings Article | 14 May 2004 Paper

Application of newly synthesized poly(hydroxystyrene-acrylate) copolymers to improve vacuum stability on E-beam resist for mask fabrication

Dong-hwal Lee, Sang-jung Kim, Dong-uk Choi, Deogbae Kim, Jaehyun Kim, Chang-hwan Kim

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534999

KEYWORDS: Polymers, Mask making, Lithography, Chemistry, Line edge roughness, Photomasks, Electron beam lithography, Reticles, Polymethylmethacrylate, Extreme ultraviolet lithography

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Proceedings Article | 14 May 2004 Paper

Investigation of the effect of resist components and process condition on photochemical efficiency of ArF photoresist

Jung-Woo Kim, Eun-Kyung Son, Sang-Hyang Lee, Deogbae Kim, Jaehyun Kim, Geunsu Lee, Jae Chang Jung, Cheol Kyu Bok, Seung Chan Moon, Ki Soo Shin

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534675

KEYWORDS: Polymers, Photoresist processing, Lithography, Photoresist materials, Diffusion, Semiconducting wafers, Silicon, Photorefractive polymers, Scanning electron microscopy, Electronic components

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Proceedings Article | 12 June 2003 Paper

Effects of quencher ability on profile in chemically amplified resist system

Deogbae Kim, Hyun-Jin Kim, Sook-Hee Cho, Dong-Hwal Lee, Kwang-Hyi Im, Min-Ja Yoo, Sang-Hyang Lee, Jaehyun Kim, Jin-Soo Kim, Hyeong-Soo Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485161

KEYWORDS: Diffusion, Lithography, Polymers, Silicon, Line edge roughness, Chemically amplified resists, Photoresist processing, Semiconducting wafers, Coating, Etching

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Proceedings Article | 12 June 2003 Paper

Investigation on the role of residual casting solvent in photolithographic behavior in 193-nm resists

Jae-Hyun Kang, Seung-Keun Oh, Eun-Kyung Son, Jung-Woo Kim, Yun-Hyi Kim, Yong-Jun Choi, Deog-Bae Kim, Jaehyun Kim

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485163

KEYWORDS: Diffusion, Electroluminescence, Polymers, Polymer thin films, Lithography, Semiconducting wafers, Silicon films, Molecules, Silicon, Chemically amplified resists

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