Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process

Carlton Washburn; Nick Brakensiek; Alice Guerrero; Kevin Edwards; Charlyn Stroud; Nicki Chapman

doi:10.1117/12.655734

11 April 2006 Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process

Carlton Washburn, Nick Brakensiek, Alice Guerrero, Kevin Edwards, Charlyn Stroud, Nicki Chapman

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532K (2006) https://doi.org/10.1117/12.655734
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

This paper describes a new approach to help overcome the challenges of fabricating leading-edge devices by using the trench first dual damascene process. Wet gap-fill materials are designed to reduce film thickness bias across a wafer while keeping wafers in the same track in which they were coated. As the first process step, the wafer is coated with a thick layer of wet gap-fill material to fill all trenches, thus guarding against resist pooling in the trenches. The substrate is then baked to partially cure the wet gap-fill material. Standard 0.26N tetramethylammonium hydroxide (TMAH) is then used to wet etch the wet gap-fill layer back to the substrate surface. For this study, substrates with different trench depths and widths were processed, cross-sectioned, and measured. The effect of trench dimensions and aspect ratio on the develop properties of WGF200-343 was investigated to see if it could be used as a wet trench-fill material. This work will help develop a process that will allow the use of trench-first DD processing in modern semiconductor manufacturing.

Citation Download Citation

Carlton Washburn, Nick Brakensiek, Alice Guerrero, Kevin Edwards, Charlyn Stroud, and Nicki Chapman "Wet-recess process optimization of a developer-soluble gap-fill material for planarization of trenches in trench-first dual damascene process", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532K (11 April 2006); https://doi.org/10.1117/12.655734

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
6 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Semiconducting wafers

Etching

Copper

Dielectrics

Photoresist processing

Coating

Semiconductor manufacturing

Show All Keywords

Keywords/Phrases

Search In:

Publication Years