Investigation of InP epitaxial films on GaAs substrate grown by LP-MOCVD

Aiguang Ren; Qi Wang; Bin Chen; Hui Huang; Yongqing Huang; Xiaomin Ren

doi:10.1117/12.667709

23 January 2006 Investigation of InP epitaxial films on GaAs substrate grown by LP-MOCVD

Aiguang Ren, Qi Wang, Bin Chen, Hui Huang, Yongqing Huang, Xiaomin Ren

Proceedings Volume 6029, ICO20: Materials and Nanostructures; 60290T (2006) https://doi.org/10.1117/12.667709
Event: ICO20:Optical Devices and Instruments, 2005, Changchun, China

Abstract

The paper reports that InP epitaxial layers were grown on iron doped semi-insulating GaAs substrate by low-pressure metalorganic chemical vapor decomposition (LP-MOCVD). Prior to the growth of InP, amorphous InP buffer layer was grown at 400°C, then the substrate zone temperature was raised to the normal InP growth temperature and InP epitaxial layer was grown at 665°C. The obtained InP layers have been characterized by transmission electron microscope, optical microscope, X-ray diffraction, photoluminescence measurement.

Citation Download Citation

Aiguang Ren, Qi Wang, Bin Chen, Hui Huang, Yongqing Huang, and Xiaomin Ren "Investigation of InP epitaxial films on GaAs substrate grown by LP-MOCVD", Proc. SPIE 6029, ICO20: Materials and Nanostructures, 60290T (23 January 2006); https://doi.org/10.1117/12.667709

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