In this paper, we propose a method to remove the imaging ambiguity caused by scattering in foggy days based on the utilization of generalized Gaussian function. We use the generalized Gaussian function to simulate the light transmission performance in foggy weather and then obtain its attenuation charateristics for further achieving image defogging results. We also propose a zonal dehazing method according to the distribution of fog in hazed image, thereby further improving the quality of the dehazing image. We use real fog data sets to quantitatively analyze and visualize the results. The simulation results show that the image information entropy and visible edge ratio obtained by the algorithm are improved, which verifies the effectiveness and superiority of the proposed algorithm.
We report a maskless reactive ion etching (RIE) method that employs O2, CHF3 and SF6&O2 gas plasma sequentially to generate nano-cones structures on silicon substrates with good uniformity. In this method, nano-cones are made under carefully-controlled conditions that restrict their width and height to 60 nm and 82 nm, respectively. According to the formation trend of nano-cones under different plasma conditions, the contributing mechanism is discussed. With the multiple effects of etching time, chamber pressure and self-bias voltage, the height, angle and density of nano-cones will be varied within a certain range. Given these variations, a nano-cone structure with good uniformity was generated using the following parameters: etching time of 300 s, chamber pressure of 40 mtorr, self-bias voltage of 75 W, and a SF6&O2 flow ratio of 75 sccm: 75 sccm. The experiment in this report demonstrates a promising way to fabricate silicon-based nano-cone structures for photonic and optoelectronic applications, with advantages of the controllability and compatibility of its dry-etching process.
Electron channeling contrast imaging (ECCI), as a rapid and convenient technique, has been widely used to characterize dislocations of heteroepitaxial III-V materials in recent years. The previous ECCI measurements, however, were primarily based on plan-view ones. In this work, we demonstrate an experimental observation of the cross sectional ECCI measurement on a Si-based GaAs sample for the first time. The plan view ECCI image can provide information on threading dislocations, stacking faults, as well as the dislocation distribution. By investigating the relationship between the defect contrast and the corresponding accelerating voltage, the optimal range of beam voltages for cross-sectional ECCI measurement is 10 kV-15 kV. The cross-sectional ECCI can simplify the process of characterizing dislocations in Si-based III-V materials.
Conventional metal-dielectric stacked hyperlenses based on hyperbolic metamaterials can reconstruct subwavelength information to the far field without loss, which is an effective method to break the Abbe diffraction limit. However, the radial resolution of most of current hyperlens is not high enough, which maybe hinders their applications in 3D precision imaging. Meanwhile, the presence of strong side lobes in the hyperlens far-field imaging is another issue, which not only weakens the main lobe, but also results in the overlapping of image points of multiple objects and the consequent difficulty in distinguishment. Here we propose a simple and effective method of achieving an incredible radial super-resolution imaging capability while having an outstanding side lobes suppression ratio (SLSR). Our structure for tubular hyperlens consists of alternating 92 pairs of Ag/Yi2O3 layers whose inner radius is 400 nm and the thickness of both Ag and Yi2O3 is 10nm. Then, we simply introduce the nano-gap layer into hyperlens by replacing Ag and Yi2O3 layers, and guarantee that the nano-gap layer is surrounded by Yi2O3 layers and the overall thickness of the hyperlens is unchanged. Corresponding finite element simulation results reveal that the radial resolution reaches the highest accuracy of 3 nm and SLSR achieves more than 3 dB at 365 nm TM-polarized source, which improves the imaging clarity extremely. The hyperlens we designed is of great significance for ultra-precision 3D optical imaging and real-time biomedical imaging. In addition, the application prospect on high performance sensing can be expected due to the super-resolution characteristics.
We propose and implement a graphene-based composite fiber sensor in this paper. The advantages of this composite fiber lie in simple and practicable fabrication, high sensitivity to tensile strain deformation, wide maximal sensing range. The experiment shows that the composite fiber can monitor small signals of the body and massive movements in conventionality condition such as human pulse and the movement of elbow. This suggests that this graphene-based composite fiber has a broad prospect in health monitoring and movement recognition.
A scheme is proposed to realize the all-optical phase regeneration of four-channel quadrature phase shift keying (QPSK) signal based on phase-sensitive amplification. By utilizing conjugate pump and common pump in a highly nonlinear optical fiber, degenerate four-wave mixing process is observed, and QPSK signals are regenerated. The number of waves is reduced to decrease the cross talk caused by undesired nonlinear interaction during the coherent superposition process. In addition, to avoid the effect of overlapping frequency, frequency spans between pumps and signals are set to be nonintegral multiples. Optical signal-to-noise ratio improvement is validated by bit error rate measurements. Compared with single-channel regeneration, multichannel regeneration brings 0.4-dB OSNR penalty when the value of BER is 10−3, which shows the cross talk in regeneration process is negligible.
An In0.66Ga0.34As0.73P0.27/In0.89Ga0.11As0.23P0.77 quantum-well laser structure was grown on an InP substrate. The whole structure was grown by metalorganic chemical vapor deposition. The material quality was characterized by double crystal X-ray diffraction and room-temperature photoluminescence spectra. It shows that the active region’s optical properties are comparable to that InGaAs/InGaAsP quantum-well lasers. Meanwhile, we fabricated an InP-based InGaAsP/InGaAsP multiple quantum wells (MQWs) laser at 1.3 μm wavelength. Under quasi-continuous wave condition, a threshold current of 400 mA and the single side slope efficiency of 0.18 mW/mA are achieved for a broad area device with 100 μm-wide strip and 500 μm-long cavity at room-temperature. The wavelength of emission spectrum is 1305 nm. When the injection current is 700 mA, FWHM of the envelope is 3.6 nm.
Au nanoparticle-coated In0.2Ga0.8As/GaAs bilayers have been released from GaAs (100) substrate through selective wet etching of AlAs sacrificial layer, which provides a solution to implant metal nanoparticles (NPs) in the inner wall of self-rolled-up III-V semiconductor microtubes. Scanning electron microscope (SEM) reveals that the diameter of Au nanoparticle-decorated In0.2Ga0.8As/GaAs microtube is only 2.4μm, 300nm smaller than that of traditional counterparts. This phenomenon can be explained by that the surface tension of NPs and the intrinsic strain relaxation of In0.2Ga0.8As/GaAs bilayers both affect the rolling process. In order to understand the diameter reduction in Au-assistant microtubes, room temperature (RT) Raman measurements have been employed to study the strain effects reflected by the GaAs longitudinal optical (LO) phonon mode shifts when compared LO mode of microtubes with as-grown planar. The spectrum showed that there were about 10 wavenumbers and 2.6 wavenumbers red-shifts of GaAs LO for Au-assistant and non-Au-assistant structures, respectively, from which we calculated that about 2.56% and 0.66% strain change occurred. Au nanoparticle enhanced Raman shift clearly. According to this study, an approach to reduce the diameter of rolled-up microtubes was demonstrated, and this method may provide viable solution to fabricate nanotubes in the application for Lab-on-a-chip system.
Surface-enhanced Raman scattering (SERS) is an effective spectral analysis technique as its advantage of molecular fingerprint, ultra-sensitivity and non-contact. It is the most popular and easiest method to create SERS metal nanoparticles (NPs) combining magnetron sputtering deposition of noble metal with rapid annealing. In this study, we have demonstrated an approach to improve the SERS effect by using graphene oxide (GO) Au NPs composite structure. Here, we obtain the Au NPs coated SOI substrate prepared by magnetron sputtering 4 nm Au film and followed by rapid annealing treatment. The experimental results indicate that the SERS intensity is maximum of the Au NPs coated SOI substrate with the average particle diameter of 20 nm when the rapid annealing time is 30s and temperature is 500 degrees. Then, graphene oxide solution is spin coated on the Au NPs to form the GO-Au NPs composite structure. The morphology of GO-Au NPs have been characterized by scanning electron microscope (SEM). Rhodamine 6G (R6G) is used as the probe molecule to detect the SERS intensity. The GO-Au NPs has an excellent SERS effect which can detect R6G as low as 10-9M. Besides, compared to the Au NPs without GO the GO-Au NPs has two times Raman intensity enhancement of bands at 774 cm-1 because of the GO improving the SERS properties through strong ability of adsorption the probe molecule and chemical enhancement effect. Therefore, the GO-Au NPs composite structure shows a promising future to detect low concentration material.
A new type of subwavelength plasmonic waveguide based on a core-shell structure has been proposed. It is based on a semicylinder-shape dielectric-loaded plasmonic waveguide supporting the excitation of surface plasmon polaritons (SPPs). Simulation results reveal that the proposed waveguide exhibit a better trade-off in terms of mode localization and propagation length when compared to the traditional dielectric-loaded plasmonic waveguide. In addition, a ring resonator formed with the proposed waveguide shows a perfect performance with 1.8nm bandwidth and 23dB extinction ratio.
InAs/GaAs quantum dots (QDs) were grown by Metal-Organic Chemical Vapour Deposition (MOCVD) in the Stranski-Krastanow growth mode. The influence of growth parameters such as V/III ratio, growth temperature, QDs deposit thickness and the deposition rate of the overgrowth layer have been investigated. Through the room temperature photoluminescence (PL) spectra, we have obtained the quantum dots’ characters. The growth of QDs is very sensitive to the parameters, and the parameters influence the QDs quality nonlinearly. After an extensive study of these growth parameters, we achieve a balance of all the growth parameters with which InAs/GaAs QDs with 80meV of full width at half maximum (FWHM) at 1.12μm have been achieved.
Add/drop filters are key components of Wavelength Division Multiplexing (WDM) communication systems. Free spectral range(FSR) is a key parameter for Add/drop filters, the FSR should operate within the entire C-band (1530-1562nm).And flat-top drop-port response with a sharp rolloff is also import, Flatness of the passband, sharp roll-off from passband to stop band are necessary to minimize the pulse broadening and the packing efficiency of wavelength channels. In this paper, we proposed an asymmetric approach to design high-order microring filters, The aim is to achieve large extension ratios and adequate suppression of the spurious interstitial mode, meanwhile, flat-top and steep-side response in filter could be obtained by this approach. Our simulation results showed an extended FSR of 40nm, reducing the interstitial peak suppression from 5dB to 35dB and a boxlike filter response with sharpe factor(SF) of 0.68. And a quality-factor of 2961 and a 3-dB bandwidth of 0.52nm is achieved.
In this paper, we proposed a novel photodetector composed of cascaded microring resonators on silicon-on-insulator. In order to enhance the tolerance of signal wavelength drifting in optical communication, the photodetector was designed with a flat-top steep-edge response. In the photodetector, we used polarization insensitive cascaded silicon microring resonators as optical filter cavity, and used a silicon racetrack resonator bonded in p-i-n chip as optical detecting cavity. We used finite element (FE) mode solver, finite different time domain (FDTD), and transfer matrix method (TMM) to simulate the behavior of the polarization insensitive optical filter. With optimized parameters, the photodetector showed high quantum efficiency, narrow line width, and flat-top steep-edge.
One of the current research trends in silicon photonics is to integrate many kinds of optical functionalities on a single chip. In this paper, based on Silicon-on-Insulator (SOI) we design a tunable filtering waveguide consisted of a Fabry-Pérot cavity and a straight waveguide. The Fabry-Pérot cavity is used for wavelength selectivity and the waveguide is used for light guide. The transmission characteristic of the device has been numerically simulated. The result shows that the Full-Width Half-Maximum (FWHM) is inversely proportional to pairs of the DBR. The tunable filtering waveguide can be integrated with waveguide photodetector, and hopefully to be used in WDM system.
GaAs/Si and InP/GaAs wafers growth was performed by low-pressure metal-organic chemical vapor deposition (LPMOCVD)
using a two-step growth method. The wet chemical etching methods were used to characterize the dislocations
density. For the GaAs/Si wafer, the chemical etching was performed in molten KOH at temperatures about 350°C and
for duration about 1.5min. For the InP/GaAs wafer, the chemical etching was performed in H3PO4: HBr (2:1) solution
(Huber etchant) at temperatures about 20°C and for duration about 2min.Then, the morphology of the dislocations
characteristics of the etch pit density (EPD) were examined with a high-resolution field-effect scanning electron
microscope (SEM). There are some ellipse dislocations pits of the GaAs/Si wafer with a density about 2.0x107cm-2, and
sizes ranging from 700nm to 1500nm in diameter, and there are many sunken dislocations pits of the InP/GaAs wafer
with a density about 2.0x108cm-2, and sizes ranging from 300nm to 700nm in diameter. So the method has been accurate
and convenient to show the dislocations characteristics of metamorphic GaAs/Si and InP/GaAs wafers.
The integration of optical functionalities on a chip has been a long standing goal in the optical community. The ability to integrate compound semiconductors onto foreign substrates can lead to superior or novel functionalities. In this paper we integrate InGaAs /InP photodetectors onto Silicon-on-Insulator (SOI) racetrack resonators. The racetrack resonators can be fabricated by utilizing electron beam lithography and inductively-coupled-plasma reactive ion etching (ICP-RIE) technique. The racetrack structure is used for wavelength selectivity and the straight waveguide sections are used to achieve a large value of the coupling coefficient with a bus waveguide. The transmission characteristic of the racetrack resonator with a multimode interference (MMI) coupler has been numerically simulated. The result shows that the free spectral range (FSR) is inversely proportional to the length of the racetrack resonator. The FSR decreases as the increase of the length of straight waveguide sections or the radius of rings. The generalized multimode transmission matrix of the MMI has been evaluated with beam-propagation method. It has been found that the resonance wavelength can be reasonably predicted. Finally, the equation of quantum efficiency of the device is derived. The calculated peak quantum efficiency of the designed photodetector can achieve about 90% at 1.5499 μ m.
A novel long wavelength photodetector with dual-wavelength response has been designed and fabricated, which can be realized by a step-shaped Fabry-Perot (F-P) filter structure. By using low pressure metal organic chemical vapor
deposition (LP-MOCVD), the step-shaped GaAs/AlGaAs distributed Bragg reflectors (DBR) and the InP PIN
photodetector are grown on a GaAs substrate, and by employing a thin low temperature buffer layer, the high quality
GaAs/InP heteroepitaxy is realized. The structure of the photodetector is optimized by theoretical simulation. This device has a dual-peak distance of 19nm (1558, 1577 nm). The peak quantum efficiency of 8.5% around 1558 nm and 8.6% around 1577 nm, the 3dB bandwidth of 16 GHz are simultaneously obtained.
The effect of the graded InxGa1-xAs layer on the distribution of the strain was
studied by calculating the strain of different models using the finite element method. The results
demonstrate that the graded InxGa1-xAs layer can reduce the strain and thus lead to longer
emission wavelength. The results also demonstrate that the graded InxGa1-xAs layer can increase
strain in the GaAs capping layer which cause disadvantage to grow stacked InAs/GaAs QD
structure. But the strain can be released though increase the thickness of spacer layer when grow
stacked structure.
We present first-principles calculations of the band-gap properties of the zinc-blende BN, GaN and BxGa1-xN alloys. By
16-atom supercells to model a random alloy, the direct band-gap (Γ15v-Γ1c) bowing of 5.0 eV is obtained for BxGa1-xN
alloys in the range of 0~37.5%, and the bowing parameter increases by 0.043eV/%B with boron (B) composition
increasing. In addition, our calculated results show that 0.8eV (1550nm) direct transition band-gap energy of
BxGa1-xNyAs1-y lattice matches to Si can be theoretically obtained while boron (B) composition is 4% and nitrogen (N)
composition is 16%.
The effect of growth temperature on InAs QDs grown by metal-organic chemical vapor deposition (MOCVD) was
investigated in detail. Growth temperature affects InAs QDs in three ways, including the reconstruction mode of new
InAs crystal faces, the migration length of adatoms, band gaps of InAs QDs, and the interaction among three aspects was
studied. The variation of density, size and wavelength was experimentally demonstrated. The high density of
5.2×1010cm-2 was obtained. The room temperature wavelength of InAs/GaAs QDs using GaAs as capping layer reached
1240nm.
We have fabricated strain-reduced InAs quantum dots (QDs) by boron incorporation grown on GaAs(100) substrate. The
size of uncapped InAs QDs was increased with boron incorporation. The effect of boron on the PL spectra of InAs QDs
capped by an InGaAs strain-reducing layer wasn't obvious. However, when boron atoms were incorporated in InAs QDs
capped by a GaAs overgrown layer, the PL intensity was strongly enhanced, and the PL peak shifted towards a longer
wavelength. It was found that the incorporation of boron atoms within the InAs QDs could drastically reduce the In/Ga
intermixing effects during capping coverage.
N-doped GaAs nanowires (NWs) were grown on GaAs (111) B substrate by means of vapor-liquid-solid (VLS)
mechanism in a metalorganic chemical vapor deposition (MOCVD) system. Two flux rates of n-type dopants used for
GaAs NWs growth were researched. For comparison, undoped GaAs NWs were grown at the same conditions. It is
found that all NWs are vertical to the substrate and no lateral growth occurs. The growth rate is proportional the flux
rates of n dopant. It is observed that there is Gibbs-Thomson effect in doped NWs. Pure zinc blende structures without
any stacking faults from bottom to top for all three samples were achieved.
A novel waveguide photodetector with flat-top and steep-edge response is proposed in the paper. The response is
obtained by designing a racetrack resonator following parallel-cascaded two or three micro-ring resonators. Its maximum
values of the quantum efficiency in bandpass are 99.8%; 0.5dB, 3dB, and 20dB bandwidth is 0.22nm, 0.39nm, and1.1nm
for cascaded double structure and 0.28nm, 0.32nm, and 0.5nm for cascaded triple structure, both of which meet the
requirements of WDM system. Compared with similar waveguide photodetectors and RCE-PD, this photodetector has
high quantum efficiency, narrow line width and good flat-top and steep-edge response. The structure is compact and
conducive to chip-scale integration.
This paper proposes a circuit control method achieving the flat-top steep-edge response of photodetectors. The response
is realized using three wavelength selective photodetectors and the circuit which consists of amplifiers, comparators and
a AND gate. Two groups of experiments were carried out. In group 1, 0.5dB, 3dB, 20dB bandwidths are 2.76nm,
3.29nm, 4.58nm from 1546nm to 1549.3nm. In group 2, 0.5dB, 3dB, 20dB bandwidths are 3.19nm, 2.89nm, 3.06nm
from 1554.8nm to 1557.6nm. The results of experiments show that the desirable flat-top steep-edge response can be
gained and the response linewidth is adjustable by selecting different photodetectors, so that the requirement of the
WDM system and the network can be met. The method is easy to realize with low cost and has wide application in
optical measurements and optical processing etc.
A novel approach, using a PNA(network analyzer) instead of Spectrum Analyzer in optical heterodyne measurement
system, to characterize the frequency response performance of photodetectors is proposed. This scheme synthesize the
advantages of both the optical heterodyne technique and accurate calibration technique of PNA. In this paper, two tunable
narrow linewidth lasers are used to reduce the errors caused by the variations in the linewidth of the beat signal, and the
optical power is accurately monitored and controlled to minimize the noise due to laser output power fluctuates. We
analyze the influence of variations linewidth, and associative simulation on this influence is been done. And an error
eliminate model is presented to remove the influence of variations linewidth. SOLT calibration technique is used to
accurately calibrate the power receiver of PNA. In addition, when configured with an 80 GHz frequency mixer in this
measurement system, we can achieve the frequency response measurement of a 80 GHz photodetector since we are using a
40 GHz PNA.
New type of photodetector with cascaded waveguide grating filters as bottom reflection mirror is proposed. Greatly
improved spectral response is shown to follow by the integration of waveguide grating into classical thin-film
homogeneous layers. Calculation results for single grating, cascaded-double grating and cascaded-triple grating structure
are demonstrated. An increasing rectangular spectral response is obtained by cascade two or three grating filters.
Compared with traditional photodetector with distributed Bragg reflectors (DBRs), this new type of photodetector with
the same materials require significantly fewer layers while maintaining narrow flat-top response, high peak efficiency
and low sideband reflectance.
Two-dimensional subwavelength gratings (2D-SWGs) that consist of net-grid structure are studied by rigorous coupledwave
approach (RCWA) and finite-difference-time-domain (FDTD) method. 2D-SWGs can be designed as infrared
reflectors whose reflectivity can reach 99.98% at 1.55μm while maintaining reflectivity higher than 99% across the 1.47-
1.59μm wavelength range. We design these SWGs as the bottom mirrors in resonant cavity enhanced photodetectors
(RCE-PDs) for optical communication system. Because SWGs can achieve high reflectivity as well as wide bandwidth,
RCE PD's quantum efficiency is increased to 95.7% at 1.55μm and the device has a significant size reduction compared
with using DBR bottom mirror.
A novel resonant cavity enhanced photodetector with asymmetric dual-absorption layer structures that shifts the limitation on
bandwidth-efficiency further than is possible in conventional photodetector is proposed. The quantum efficiency and frequency
bandwidth are 93% with a lower reflectivity of top mirror, and 88GHz with mesa area for 10μm×10μm, respectively.
A new photodetector was designed with Metal Aperture Arrays filter in this paper. The shape and dimensions of the holes in an arrays
do influence its transmission spectrum compare to the conventional photodetector. Hole array and annular aperture arrays were
discussed.
GaAs nanowires were grown by the metal organic chemical vapor deposition on the GaAs(111)B substrates via Vapor-
Liquid-Solid mechanism with various Au film thickness. Experiment results indicated that thicker Au film results in
larger diameters, more dispersed size distribution, and lower density of the nanowires. All NWs are straight from base to
top, and no lateral growth occurs. The growth rate of nanowires slightly increases with Au film thickness. It indicates
that the growth of GaAs NWs is mainly promoted by the catalyzed chemical reaction at the drop surface, the Au particles
surface density could influence the growth rate, and contribution of diffusion from the adatom could be neglected.
A new photodetector was designed with Metal Aperture Arrays filter in this paper. The shape and dimensions of the holes in an array
do influence its transmission spectrum compare to the conventional photodetector. Hole array and annular aperture arrays were
discussed.
InP nanowires were grown on InP(100) substrates via VLS mechanism with Au particles as catalyst. Various
morphologies of the nanowires such as straight, L-branch, Y-branch, K-branch, bottle-shape, cone-shape, needle-shape
were obtained.
A long wavelength multichannel tunable photodetector array was fabricated based on multistep Fabry-Pérot filter by
using the heteroepitaxy growth of InP-In0.53Ga0.47As-InP PIN structure on a GaAs based GaAs/AlAs Fabry-Pérot filter
structure. High quality heteroepitaxy was realized by employing a thin low temperature buffer layer. The array can detect
multiple channels, and the tuning range of each detector is about 10nm. A spectral linewidth of 0.5nm, a quantum
efficiency over 25%, and a 3dB bandwidth of 9.2GHz were simultaneously obtained.
KEYWORDS: Boron, Gallium arsenide, Diffraction, Gallium, Crystals, Atomic force microscopy, Indium, Metalorganic chemical vapor deposition, Chemical species, Temperature metrology
High quality zinc-blende BxGa1-xAs, BxAl1-xAs, BxGa1-x-yInyAs epilayers and relevant MQW structures containing 10-
period BGaAs(10nm)/GaAs(50nm) and BGaInAs(10nm)/GaAs(50nm) have been successfully grown on exactly-oriented
(001)GaAs substrates by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). Triethylboron,
trimethylgallium, trimethylaluminium, trimethylindium and arsine were used as the precursors. Boron incorporation
behaviors have been studied as a function of growth temperature and gas-phase triethylboron mole fraction. In this study,
the maximum boron composition x of 5.8% and 1.3% was achieved at the same growth temperature of 580°C for bulk
BxGa1-xAs and BxAl1-xAs, respectively. 11K photoluminescence (PL) peak wavelength of lattice-matched BxGa1-x-yInyAs
epilayer with boron composition of about 4% reached 1.24μm.
Under a wide range of process parameters, such as varying total flow rate of gas inlet,
chamber pressure, growth temperature, wafer carrier rotation, it has been finally obtained the
favorable conditions of the better uniform distributions of steady flow and thermal field profiles
for growing high quality compound semiconductor materials inside the reactor. Then, the long-
wavelength metamorphic In0.53Ga0.47As PIN photodetectors grown on semi-insulating GaAs
substrates are successfully demonstrated by low temperature InP buffer technology. The active
area of this photodetector is 50μm×50μm and the thickness of In0.53Ga0.47As adsorption layer is
300 nm. The 3dB bandwidth of frequency response reaches 6GHz. The responsivity of 0.12
A/W to 1550 nm optical radiation, corresponding to the external quantum efficiency of 9.6%,
was achieved.
In this work, we reported the buffers optimum of high-quality InP epilayer grown on GaAs substrate for fabrication of InP-related devices. First, LT-GaAs (450°C, 15nm)/LT-InP((450°C, 15nm) double LT buffers were deposited on the substrate as the initial layers. The effects of double LT buffers were studied compared with the results of single LT-InP buffer scheme. It was demonstrated that: (i) with a proper LT-GaAs buffer thickness, the double
LT-buffer became more "compliant" for strain accommodation than single LT-InP buffer; (ii) there existed an optimal thickness of
LT-GaAs buffer for a given thickness of LT-InP layer at which the crystal quality reached the best, just like the conventional buffer optimum process. Second, in order to block the "escaped" dislocations from the buffer/substrate interface, InxGa1-xP/InP (x≈0.2) strained superlattices (SLS) were introduced as defect filtering layers before the growth of the final InP layer. We investigated the effects of the periods and inserting position of the SLS on the stress relaxation and the crystal quality of InP top layer. It was suggested that when the total thickness of the epilayer was fixed, both the thickness and the periods and the distance from the interface should be carefully designed to reduce the stress and improve the crystal quality of the epilayer simultaneously. Finally, a 2-μm-thick InP epilayer was grown on GaAs substrate using (450°C, 15nm)/LT-InP(450°C, 15nm) double LT buffers combined with inserting 15-period (4nm/6nm) In0.8Ga0.2P/InP SLS into epilayer. Then X-ray diffraction measurements showed the best result of the full width at half maximum (FWHM) was 203 arcsec with estimated dislocation density of 2.8×107 cm-2.
The design and fabrication of a Monothically integrated dual-wavelength tunable photodetector are reported.
The dual-wavelength character is realized by introducing a taper substrate. The photodetector operating on
long wavelength is Monothically integrated by using heteroepitaxy growth of InP-In0.53Ga0.47As-InP p-i-n
structure on GaAs based GaAs/AlAs Fabry-Perot filter structure, which can be tuned by thermal-optic effect.
High quality heteroepitaxy was realized by employing a thin low-temperature buffer layer. The integrated
device with a dual-peak distance of 7nm (1530nm,1537nm) , a wavelength tuning range of 5.0 nm, and a
3-dB bandwidth of 5.9 GHz was demonstrated, according with the theoretical simulation.
We demonstrate a wavelength-selective photodetector that combines a Fabry-Perot filtering-cavity (FPC) with a taper absorption-cavity (TAC). The taper cavity shows non-resonant effect but exhibits absorption enhancement effect, so that high-speed, high quantum efficiency, wide tuning range and ultra-narrow spectral linewidth can be achieved simultaneously. Device performance was theoretically investigated by including key factors such as taper angle, finite-size diffracting-beam input, and lateral walk-off in the taper cavity. The device was fabricated by bonding a GaAs-based FPC, which can be tuned via thermal-optic effect, with an InP-based TAC. The experiment results of the devices were reported in another paper.
Integrated optical demultiplexing and receiving device based on one-mirror-inclined three-mirror cavity (OMITMiC) structure, or OMITMiC wavelength-selective photodetector, is a kind of novel integrated multifunction optoelectronic device which was proposed in 1996 and first realized with GaAs-based materials for short wavelength (less than 1μm) operation in 2001. Recently, after great efforts on developing controllable self-retreating dynamic mask (CSRDM) wet etching method for InP-based epitaxial layer and low temperature InP/GaAs wafer bonding technique, such a device operating at long wavelength region (1550nm) had also been successfully demonstrated and the measurement results shown that it features high-speed (12GHz with a mesa area of 40×36 μm2), high quantum efficiency (66%~78.4%), ultra-narrow spectral linewidth (0.6 nm) and wide range tuning (more than 10 nm ) simultaneously. In addition, a long wavelength monolithic OMITMiC photodetector with GaInNAs absorption layer has also been demonstrated. These achievements could have a significant impact on wavelength-division-multiplexed (WDM) optical fiber transmission systems and networks.
The paper reports that InP epitaxial layers were grown on iron doped semi-insulating GaAs substrate by low-pressure metalorganic chemical vapor decomposition (LP-MOCVD). Prior to the growth of InP, amorphous InP buffer layer was grown at 400°C, then the substrate zone temperature was raised to the normal InP growth temperature and InP epitaxial layer was grown at 665°C. The obtained InP layers have been characterized by transmission electron microscope, optical microscope, X-ray diffraction, photoluminescence measurement.
The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic. The low temperature bonding of GaAs/InP wafers is successfully realized by a new surface treatment at 380°. In this method, the surfaces of two wafers are etched by sulfuric solution. Then following a thermal annealing process. The properties of the bonded structures are studied in terms of the interface shape, electrical and optical characteristic through transmission electron microscope (SEM), interface I-V curve, X-ray diffraction (XRD), photoluminescence (PL) spectra, and so on. The optical characteristic of In0.53Ga0.47As/InP multi-quantum wells (MQWs) grown on an InP substrate, which was bonded to GaAs substrate was investigated by measuring photoluminescence (PL) spectra at room temperature. After bonding, neither wavelength shift nor degradation of full-width at half maximum (FWHM) was observed. And the PL intensities of the bonding sample increased about 50%. The bonding strength was found to be sufficiently high and could withstand the subsequent etching and polishing procedures of the bonded wafers. This low temperature wafer bonding method is very attractive to realize optical devices such as lasers, photodetectors and optical waveguides on lattice-mismatched substrates.
Two-step growth method was used to grow InP epilayers directly on GaAs (001) substrates. By employing double-crystal x-ray diffraction (XRD) to characterize the epilayers and analyzing the value of full width at half maximum (FWHM) of ω scan rocking curve, we found the initial buffer layer act a key role on the quality of epilayers. Depending on optimizing the thickness and growth temperature of the initial buffer layers, we have succeeded in improving the crystallinity of InP epilayers. When the low temperature buffer layer was 10 nm thickness and grown at 450°C, the quality of InP epilayers for 1μm thickness were the best, its FWHM of XRD ω scan rocking curve was only 512 arcsec and 201arcsec for ω-2θ scans, the room temperature photoluminescence spectrum shows the band edge transition of InP, its central wavelength is 921nm and the FWHM is only 38 meV.These results indicate high quality of InP epilayers on GaAs substrates.
In this paper, we demonstrate the design, fabrication and characterization of a long wavelength InP-based resonant cavity photodetector with InP/air-gap Bragg reflectors by using selective wet etching. The bottom mirror of the RCE photodetector is the InP/air-gap Bragg reflector; the top mirror is formed by the interface of semiconductor/air. The In0.53Ga0.47As absorption layer thickness is 300nm. A peak quantum efficiency of 60% at 1510nm and a 3-dB bandwidth of 16GHz are achieved with the active area of 50×50μm2. The dark current as low as 2nA was achieved at reverse bias of 3.0V.
High efficiency, long wavelengths InP/InGaAs resonant-cavity enhanced (RCE) Photodetector was fabricated. To circumvent the difficulty in achieving high reflective InP-based DBR, the Si/SiO2 DBR was evaporated as the bottom mirror of the cavity by using back illumination from the substrate. A quantum efficiency of 80% at 1.583um was achieved with an absorption layer thickness of only 0.2um. In addition, the Micro-pectinated Carrier-Collected Layer (MCCL) was fabricated by proton implantations, thus device capacitance can be reduced without decreasing of the illuminating area. The bandwidth was increased from 600MHz to 800MHz experimentally by formation of MCCL, without decreasing of the quantum efficiency.
Research on the one-mirror-inclined three-mirror-cavity (OMITMC) photodetectors in our laboratory is reported. In the structure of the photodetectors, it is the inclined- mirror that makes the filtering cavity and the absorption cavity decoupled, thus narrow spectral response linewidth, high-speed and high quantum efficiency can be achieved simultaneously. On the basis of the theoretical analysis, we do realize the vertical taper structure, the key part in the whole integrated device, by dynamic etch mask technique. Moreover, the first integrated device of this type was fabricated. A spectral response linewidth less than 6nm and a quantum efficiency of 52.6% have been achieved experimentally.
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