Influence of graded p-P heterojunction potential barrier on characteristics of three-dimensional HgCdTe photodiode

V. V. Vasilyev; A. V. Predein

doi:10.1117/12.628689

7 June 2005 Influence of graded p-P heterojunction potential barrier on characteristics of three-dimensional HgCdTe photodiode

V. V. Vasilyev, A. V. Predein

Author Affiliations +

Proceedings Volume 5834, 18th International Conference on Photoelectronics and Night Vision Devices; (2005) https://doi.org/10.1117/12.628689
Event: 18th International Conference on Photoelectronics and Night Vision Devices and Quantum Informatics 2004, 2004, Moscow, Russian Federation

Abstract

Properties of n⁺-on-p HgCdTe photodiode with graded p-P heterojunction at temperature 77 K are analysed numerically by solving three-dimensional diffusion equation in cylindrical geometry. Dependences of photodiode's parameters from composition difference Δx and position of p-n junction in relation to heterojunction are presented. Elimination of lateral collection of diffusion current with increasing of Δx is shown.

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V. V. Vasilyev and A. V. Predein "Influence of graded p-P heterojunction potential barrier on characteristics of three-dimensional HgCdTe photodiode", Proc. SPIE 5834, 18th International Conference on Photoelectronics and Night Vision Devices, (7 June 2005); https://doi.org/10.1117/12.628689

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