Dr. Vladimir Vasilievich Vasiliev Profile

Dr. Vladimir Vasilievich Vasiliev

at AV Rzhanov Institute of Semiconductor Physics

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Publications (29)

Proceedings Article | 17 July 2014 Open Access

Concept of the International Project University: learning without borders

Irina Livshits, Vladimir Vasilyev

Proceedings Volume 9289, 92890B (2014) https://doi.org/10.1117/12.2070284

KEYWORDS: Information technology, Internet, Photonics, Mechanics, Education and training, Defense and security, Social sciences, Polishing, Satellites, Analytical research

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Proceedings Article | 27 September 2008 Paper

MCT detectors: from IR to sub-mm and mm wavelength bands

F. Sizov, V. Vasiliev, J. Gumenjuk-Sichevska, Yu. Kamenev, S. Dvoretsky, N. Mikhailov

Proceedings Volume 7100, 71002C (2008) https://doi.org/10.1117/12.797436

KEYWORDS: Sensors, Terahertz radiation, Photodiodes, Bolometers, Semiconductors, Photons, Infrared sensors, Manufacturing, Infrared detectors, Superconductors

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Modern technology advances combined with unique physical properties of mercury cadmium telluride (MCT) material, empower low-signal applications in technical vision systems. Properties of MCT detectors manufactured from LPE and MBE epilayers and their dependences on thickness and doping both for IR and THz regions are discussed. It is shown by comparison of experimental data and modeling of I-V dark current characteristics that MCT photodiode ultimate electrical characteristics are limited by diffusion current in n⁺-n^--p junctions and by current via the deep traps in the gap with position E_t= 0.7 E_g above the valence band and concentrations N_t = (1.0-5.5)•10¹⁵ cm^-3 which are comparable with donor concentration in n^--region Nd = (1.1-1.8)•1015 cm^-3. Detector array parameters for a wavelength range 8-12 microns are: detectivity D*=1.9•10¹¹ cm•Hz^1/2/W, noise equivalent difference temperature NEDT ≈ 9 mK, dynamical resistance R ≈ 4·10⁹ Ohm for the reverse biases ΔV = 0.1-0.2 V. Also, it is shown that MCT layers can be successfully used as sub-mm or mm wave ambient temperature or moderately cooled hot electron bolometers. Thus, in addition to the wavelength range from SWIR to VLIR, where the MCT detectors are employed mainly as photodiodes or photoresistors, they can be used as sub-mm or mm wave detectors in the range from 190 microns to 8 mm. They can be employed here as semiconductor hot electron bolometers (SHEB). Measurements performed at electromagnetic wave frequencies ν = 37, 55, 77 GHz, and also at 0.89 and 1.58 THz with non-optimized Hg_0.8Cd_0.2Te bolometer prototype, has confirmed the basic concepts of SHEB. At ν = 0.89 THz, 77 GHz and 37 GHz the signal temperature dependencies were measured too. At 77 K the SHEB sensitivity at ν = 37 and 77 GHz is increasing up to two orders compared to room temperature data. The sensitivity S_ν ≈ 2 V/W at 300 K, and calculated both Johnson-Nyquist and generation-recombination noise values give estimations of SHEB NEP ~ 4•10^-10 W at band-width Δf = 1 Hz and ν = 37 GHz.

Proceedings Article | 26 April 2007 Paper

Application of pulsed UV laser for dicing of arrays and linear of photodiodes based on MCT solid solution

A. Novoselov, A. Klimenko, V. Vasilyev

Proceedings Volume 6636, 663619 (2007) https://doi.org/10.1117/12.742639

KEYWORDS: Photodiodes, Semiconductor lasers, Diodes, Pulsed laser operation, Silicon, Gallium arsenide, Ultraviolet radiation, Photodetectors, Staring arrays, Imaging arrays

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Proceedings Article | 22 April 2006 Paper

MCT infrared photodiodes on the basis of graded gap Р-р heterojunction grown by MBE HgCdTe epilayers on GaAs

V. Vasiliev, V. Remesnik, S. Dvoretsky, V. Varavin, N. Mikhailov, Yu. Sidorov, A. Suslyakov, A. Aseev

Proceedings Volume 6189, 61892A (2006) https://doi.org/10.1117/12.663506

KEYWORDS: Staring arrays, Photodiodes, Heterojunctions, Diodes, Gallium arsenide, Signal to noise ratio, Temperature metrology, Mercury cadmium telluride, Sensors, Diffusion

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Proceedings Article | 15 October 2005 Paper

Comparative analysis of 4x288 readouts and FPAs

Fiodor Sizov, Vladimir Reva, Yurii Derkach, Vladimir Vasiliev

Proceedings Volume 5964, 596416 (2005) https://doi.org/10.1117/12.628450

KEYWORDS: Charge-coupled devices, Readout integrated circuits, CMOS technology, Transistors, Amplifiers, Manufacturing, Photodiodes, Staring arrays, Multiplexers, Dielectrics

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Comparative analysis of four 4x288 different designed readouts elaborated at the Institute of Microdevices and the Institute of Semiconductor Physics is presented. Also some features of design 576x6 readouts adduced. All the readouts have the direct injection input circuit with incorporated cells allowing testing without photodiodes. TDI registers have three delay elements between neighbor inputs. Some characteristics of 4x288 FPAs with mercury-cadmium-telluride TDI arrays are cited too. 2-phase and 4-phase CCD readouts (2.5 micron technology) have different channel types (surface, buried and semi-buried), which include 10 bit TDI registers in each channel, and 18 channel multiplexing to 16 outputs. Two polysili-con, one metal level and 400 A dielectric layers were used. The readouts characteristics: charge handling capacity, transfer characteristics, output nonlinearity characteristics, bias dispersion, etc. are presented. CCD technology used for data multiplication results in crosstalk increase, because of the presence of rather considerable transfer inefficiency at cryogenic temperatures. Using 2.5 micron CCD technology and 2.0 CMOS technology the readouts, which include the digital interface for dead pixels deselection, preliminary amplification circuits, 36 channel multiplication by CCD registers and 2 beat multiplication by analogue switches to 4 output amplifiers, were manufactured. One pocket CMOS technology with two polysilicon, two metal levels and 350 A dielectric layers were used. To increase the linearity of transfer characteristics and noise level decrease at the output of CCD the circuits of charge-voltage conversion on the base of operational amplifiers were used. This allows getting circuits with parameters close to those obtained by 0.8 - 1.0 micron CMOS technology. Also some characteristics of 4x288 readouts designed by 1.2 micron CMOS technology are discussed (two polysilicon and two metal levels). This one includes the circuits of auxiliary electronics. Comparative analysis shows that the readouts mentioned are different in numbers of outputs, external service but have rather similar parameters.

Proceedings Article | 15 October 2005 Paper

MWIR and LWIR detectors based on HgCdTe/CdZnTe/GaAs heterostructures

Sergey Dvoretsky, Vasiliy Varavin, Nikolay Mikhailov, Yuri Sidorov, Tamara Zakharyash, Vladimir Vasiliev, Victor Ovsyuk, Galina Chekanova, Mikhail Nikitin, Ivan Lartsev, Alexander Aseev

Proceedings Volume 5964, 59640A (2005) https://doi.org/10.1117/12.624912

KEYWORDS: Staring arrays, Long wavelength infrared, Photovoltaics, Sensors, Mid-IR, Heterojunctions, Interfaces, Resistance, Gallium arsenide, Photoresistors

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Proceedings Article | 30 September 2005 Paper

Electrical properties of MIS-photodetectors in base of MBE graded-band HgCdTe

A. Voitsekhovskii, S. Nesmelov, A. Kokhanenko, Yu. Sidorov, V. Varavin, S. Dvoretsky, N. Mikhailov, V. Vasiliev, Yu. Mashukov, T. Zakharyash

Proceedings Volume 5957, 595717 (2005) https://doi.org/10.1117/12.622117

KEYWORDS: Silicon, Mercury cadmium telluride, Resistance, Semiconductors, Capacitance, Electrodes, Mercury, Cadmium, Epitaxy, Dielectrics

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Proceedings Article | 29 September 2005 Paper

V-defects at MBE MCT heteroepitaxy on GaAs(310) and Si(310) substrates

Maxim Yakushev, Alexander Babenko, Danil Ikusov, Vladimir Kartashov, Nicolai Mikhailov, Irina Sabinina, Yuri Sidorov, Vladimir Vasiliev

Proceedings Volume 5957, 59570G (2005) https://doi.org/10.1117/12.622424

KEYWORDS: Tellurium, Cadmium, Heterojunctions, Mercury cadmium telluride, Diodes, Photodetectors, Silicon, Etching, Heteroepitaxy, Gallium arsenide

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Proceedings Article | 7 June 2005 Paper

Mathematical modeling of amplification MCP current by methods of the theory of electrical circuits

A. Berkin, V. Vasilyev

Proceedings Volume 5834, (2005) https://doi.org/10.1117/12.628903

KEYWORDS: Microchannel plates, Mathematical modeling, Resistance, Convection, Electrons, Power supplies, Resistors, Information operations, Image intensifiers, Amplifiers

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Proceedings Article | 7 June 2005 Paper

Influence of graded p-P heterojunction potential barrier on characteristics of three-dimensional HgCdTe photodiode

V. Vasilyev, A. Predein

Proceedings Volume 5834, (2005) https://doi.org/10.1117/12.628689

KEYWORDS: Photodiodes, Heterojunctions, Diodes, Diffusion, Mercury cadmium telluride, Quantum efficiency, Staring arrays, Interfaces, Sensors, Absorption

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Proceedings Article | 7 April 2005 Paper

4x288 linear array with hybrid ROIC (CCD + CMOS)

Fiodor Sizov, Victor Ovsyuk, Vladimir Vasil’ev, Tamara Zakhar'yash, Alexandr Suslyakov, Nikolai Talipov, Nikolai Mikhailov, Vasiliy Varavin, Vladimir Reva, Alexandr Golenkov, Yuriy Derkach, Vyacheslav Zabudsky, Sergei Korinets

Proceedings Volume 5726, (2005) https://doi.org/10.1117/12.591699

KEYWORDS: Charge-coupled devices, Readout integrated circuits, Silicon, CMOS technology, Manufacturing, Photodiodes, Diodes, Transistors, Staring arrays, Design for manufacturability

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Proceedings Article | 19 February 2004 Paper

MCT linear arrays and associated silicon readouts

Fiodor Sizov, Yurii Derkach, S. Dvoretski, Alexandr Golenkov, J. V. Gumenyuk-Sichevska, Vladimir Reva, Victor Ovsyuk, Yuri Sidorov, N. Talipov, V. Vasiliev, Vyacheslav Zabudsky

Proceedings Volume 5251, (2004) https://doi.org/10.1117/12.513747

KEYWORDS: Charge-coupled devices, Silicon, Manufacturing, Photodiodes, CMOS technology, Diodes, Gallium arsenide, Transistors, Mercury cadmium telluride, Staring arrays

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Proceedings Article | 22 October 2003 Paper

HgCdTe epilayers on GaAs: growth and devices

Vasily Varavin, V. Vasiliev, Sergey Dvoretsky, Nikolay Mikhailov, Victor Ovsyuk, Yuri Sidorov, A. Suslyakov, M. Yakushev, Alexander Aseev

Proceedings Volume 5136, (2003) https://doi.org/10.1117/12.519761

KEYWORDS: Hassium, Gallium arsenide, Diodes, Tellurium, Crystals, Staring arrays, Mercury, Resistance, Photodiodes, Photoresistors

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Proceedings Article | 30 September 2003 Paper

The 4x288 linear FPA on the heteroepitaxial Hg_1-xCd_xTe base

Yu. Derkach, C Dvoretski, A. Golenkov, A. Klimenko, A. Kozlov, I. Marchishin, V. Ovsyuk, V. Reva, Yu. Sidorov, F. Sizov, A. Suslyakov, N. Talipov, V. Vasilyev, T. Zahar'yash, V. Zabudsky

Proceedings Volume 5126, (2003) https://doi.org/10.1117/12.517243

KEYWORDS: Charge-coupled devices, Manufacturing, Silicon, Staring arrays, Diodes, Mercury cadmium telluride, Sensors, Photodiodes, Signal detection, Readout integrated circuits

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Proceedings Article | 14 April 2003 Paper

IR photodetectors based on MBE-grown MCT layers

Vladimir Vasilyev, Victor Ovsyuk, Yuri Sidorov

Proceedings Volume 5065, (2003) https://doi.org/10.1117/12.502164

KEYWORDS: Photodetectors, Multiplexers, Silicon, Indium, Photodiodes, Optical instrument design, Gallium arsenide, Dielectrics, Manufacturing, Infrared radiation

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Proceedings Article | 29 July 2002 Paper

Precise measurements of highly stable laser radiation frequency and phase

B. Borisov, A. Goncharenko, V. Vasiliev, V. Zhmud

Proceedings Volume 4900, (2002) https://doi.org/10.1117/12.484552

KEYWORDS: Lithium, Laser stabilization, Phase measurement, Information operations, Error analysis, Oscillators, Physics, Data processing, Mode locking, Laser metrology

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Proceedings Article | 10 October 2001 Paper

IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells

Victor Ovsyuk, Yuri Sidorov, Vladimir Vasilyev, Valerii Shashkin

Proceedings Volume 4369, (2001) https://doi.org/10.1117/12.445279

KEYWORDS: Photodetectors, Manufacturing, Mercury cadmium telluride, Gallium arsenide, Multiplexers, Quantum wells, Silicon, Staring arrays, Optical instrument design, Indium

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Proceedings Article | 22 February 2001 Paper

IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells

Victor Ovsyuk, Yuri Sidorov, Vladimir Vasilyev, Valerii Shashkin

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417773

KEYWORDS: Photodetectors, Manufacturing, Gallium arsenide, Multiplexers, Mercury cadmium telluride, Quantum wells, Silicon, Optical instrument design, Staring arrays, Indium

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Proceedings Article | 22 February 2001 Paper

2X64 linear LWIR arrays based in HgCdTe MBE-grown layers and CCD silicon readouts

Vladimir Vasilyev, Sergey Dvoretsky, Dmitrii Esaev, T. Zahariash, Anatoly Klimenko, V. Obsyuk, Yuri Sidorov, Fiodor Sizov, Vladimir Reva, Yurii Derkach, Sergey Korinets, Alexandr Golenkov, Sergey Darchuk, Vyacheslav Zabudsky

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417805

KEYWORDS: Silicon, Mercury cadmium telluride, Photodiodes, Charge-coupled devices, Long wavelength infrared, Staring arrays, Manufacturing, Diodes, Infrared radiation, Sensors

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Proceedings Article | 22 February 2001 Paper

MCT heterostructure design and growth by MBE for IR devices

Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, M. Yakushev, Vasily Varavin, Vladimir Vasilyev, A. Suslyakov, Victor Ovsyuk

Proceedings Volume 4355, (2001) https://doi.org/10.1117/12.417790

KEYWORDS: Manufacturing, Palladium, Interfaces, Resistance, Photodiodes, Photoresistors, Oxides, Tellurium, Molecular beam epitaxy, Solids

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Proceedings Article | 28 November 2000 Paper

IR photodetector arrays based on HgCdTe films and GaAs/AlGaAs multiquantum wells

Victor Ovsyuk, Yuri Sidorov, Vladimir Vasilyev, Valerii Shashkin

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407721

KEYWORDS: Photodetectors, Manufacturing, Mercury cadmium telluride, Gallium arsenide, Multiplexers, Quantum wells, Silicon, Staring arrays, Optical instrument design, Indium

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Proceedings Article | 28 November 2000 Paper

128 X 128 FPAs on MBE-grown CdHgTe layers for medium- and far-IR range

Vladimir Vasilyev, Sergey Dvoretsky, Dmitrii Esaev, T. Zakhariash, Anatoly Klimenko, A. Kozlov, I. Marchishin, Victor Ovsyuk, N. Talipov, Yuri Sidorov, A. Suslyakov

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407757

KEYWORDS: Manufacturing, Multiplexers, Staring arrays, Resistance, Indium, Photodetectors, Silicon, Infrared cameras, Infrared imaging, Photodiodes

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Proceedings Article | 28 November 2000 Paper

MCT heterostructure design and growth by MBE for IR devices

Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, M. Yakushev, Vasily Varavin, Vladimir Vasilyev, A. Suslyakov, Victor Ovsyuk

Proceedings Volume 4340, (2000) https://doi.org/10.1117/12.407736

KEYWORDS: Manufacturing, Palladium, Interfaces, Resistance, Photodiodes, Photoresistors, Oxides, Tellurium, Molecular beam epitaxy, Gallium arsenide

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Proceedings Article | 18 November 1998 Paper

Influence of dislocation on the performance of MBE Cd0,22Hg0,78Te photodiodes

Larisa Romashko, Anatoly Klimenko, A. Kravchenko, Victor Ovsyuk, V. Voinov, V. Vasilyev

Proceedings Volume 3437, (1998) https://doi.org/10.1117/12.331320

KEYWORDS: Diodes, Electrons, Photodiodes, Temperature metrology, Diffusion, Indium, Semiconducting wafers, Phonons, Silicon, Semiconductor physics

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Proceedings Article | 22 July 1998 Paper

128x128 hybrid FPAs using MBE HgCdTe films on GaAs substrates

Dmitrii Esaev, Anatoly Klimenko, A. Kozlov, I. Marchishin, Victor Ovsyuk, N. Talipov, T. Zakhariash, Vladimir Vasilyev, Yuri Sidorov, Sergey Dvoretsky

Proceedings Volume 3379, (1998) https://doi.org/10.1117/12.317628

KEYWORDS: Mercury cadmium telluride, Multiplexers, Gallium arsenide, Photodiodes, Staring arrays, Indium, Manufacturing, Long wavelength infrared, Photodetectors, Thermography

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Proceedings Article | 13 August 1997 Paper

Focal plane arrays based on HgCdTe epitaxial layers MBE-grown on GaAs substrates

Vladimir Vasilyev, Dmitrii Esaev, Anatoly Klimenko, A. Kozlov, Alexander Krymsky, I. Marchishin, Victor Ovsyuk, Larisa Romashko, A. Suslyakov, N. Talipov, V. Voinov, T. Zakhariash, Yuri Sidorov, Vasily Varavin, Sergey Dvoretsky, Nikolay Mikhailov

Proceedings Volume 3061, (1997) https://doi.org/10.1117/12.280314

KEYWORDS: Sensors, Photodiodes, Detector arrays, Multiplexers, Staring arrays, Photodetectors, Gallium arsenide, Indium, Mercury cadmium telluride, Long wavelength infrared

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Proceedings Article | 17 June 1996 Paper

Fabrication and characteristics of long-wavelength infrared planar photodiodes on molecular beam epitaxial p-HgCdTe films

Victor Ovsyuk, S. Studenikin, A. Suslyakov, N. Talipov, Vladimir Vasilyev, T. Zahariash, Yuri Sidorov, Sergey Dvoretsky, Nikolay Mikhailov, Vasily Varavin

Proceedings Volume 2746, (1996) https://doi.org/10.1117/12.243041

KEYWORDS: Photodiodes, Diffusion, Long wavelength infrared, Diodes, Oxides, Molecular beams, Annealing, Resistance, Surface roughness, Epitaxy

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Proceedings Article | 17 June 1996 Paper

Infrared photoconductors fabricated on Hg1-xCdxTe film grown by molecular beam epitaxy

Victor Ovsyuk, A. Suslyakov, T. Zahariash, S. Studenikin, Vladimir Vasilyev, Yuri Sidorov, Sergey Dvoretsky, Vasily Varavin, Nikolay Mikhailov, V. Liberman

Proceedings Volume 2746, (1996) https://doi.org/10.1117/12.243050

KEYWORDS: Photoresistors, Molecular beam epitaxy, Infrared radiation, Infrared photography, Heterojunctions, Interfaces, Ellipsometry, Gallium arsenide, Long wavelength infrared, Mid-IR

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Proceedings Article | 13 May 1994 Paper

Investigation of the high-current linear induction accelerator operating with the relativistic magnetron

Alexander Sulakshin, Nikolai Filipenko, Gennadii Fomenko, Edvin Furman, Gennadii Kanaev, V. Vasilyev

Proceedings Volume 2154, (1994) https://doi.org/10.1117/12.175758

KEYWORDS: Microwave radiation, Resistance, Mathematical modeling, Data modeling, Modeling, Circuit switching, Reliability, Device simulation, Optical simulations, Electron beams

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Showing 5 of 29 publications

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