Ultraviolet annealing of thin Y2O3 films grown by pulsed laser deposition

Anna O. Dikovska; Petar A. Atanasov; Rumen I. Tomov; Ivan G. Dimitrov

doi:10.1117/12.617364

22 April 2005 Ultraviolet annealing of thin Y₂O₃ films grown by pulsed laser deposition

Anna O. Dikovska, Petar A. Atanasov, Rumen I. Tomov, Ivan G. Dimitrov

Proceedings Volume 5830, 13th International School on Quantum Electronics: Laser Physics and Applications; (2005) https://doi.org/10.1117/12.617364
Event: 13th International School on Quantum Electronics: Laser Physics and Applications, 2004, Bourgas, Bulgaria

Abstract

We report on the results of ultraviolet (UV)-assisted annealing of thin Y₂O₃ films produced by pulsed laser deposition. An excimer XeCl laser was used for ablation of Y₂O₃ ceramic target. The films were grown on (001) SiO₂ substrates at 500 °C and oxygen pressure of 0.05 mbar. The effect of UV-assisted laser annealing on the structure, morphology, and optical properties was investigated. The UV-assisted annealing was performed by the same laser. The beam was directed parallel or toward the surface of the as-deposited films. The influence of the ambient gas (O₂ or N₂O) is explored. The ambient atmosphere has an influence on the preferential (cubic or monoclinic) phase of gowth while it has no significant effect on the surface morphology. The absorption coefficient in the VIS range has a lower value for the films annealed with laser directed parallel to the surface independently on the gas environment. Annealing of the films with laser beam directed at the film surface slightly increases the refractive index, independently of the gas ambient.

Citation Download Citation

Anna O. Dikovska, Petar A. Atanasov, Rumen I. Tomov, and Ivan G. Dimitrov "Ultraviolet annealing of thin Y₂O₃ films grown by pulsed laser deposition", Proc. SPIE 5830, 13th International School on Quantum Electronics: Laser Physics and Applications, (22 April 2005); https://doi.org/10.1117/12.617364

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