Dual band LWIR/VLWIR type-II superlattice photodiodes

E. H. Aifer; J. G. Tischler; J. H. Warner; I. Vurgaftman; J. R. Meyer; C. L. Canedy; E. M. Jackson

doi:10.1117/12.605228

31 May 2005 Dual band LWIR/VLWIR type-II superlattice photodiodes

E. H. Aifer, J. G. Tischler, J. H. Warner, I. Vurgaftman, J. R. Meyer, C. L. Canedy, E. M. Jackson

Proceedings Volume 5783, Infrared Technology and Applications XXXI; (2005) https://doi.org/10.1117/12.605228
Event: Defense and Security, 2005, Orlando, Florida, United States

Abstract

Multiband detection capability is a critical attribute of practical infrared (IR) sensing systems for use in missile defense detect-and-track applications. This capability, already demonstrated in mercury-cadmium telluride (MCT) photodiodes and quantum well infrared photodetectors (QWIPs), has not previously been explored in type II-superlattices (T2SLs), a newer system which is under consideration to meet next-generation sensor needs. Like QWIPs, T2SLs are composed of layers of III-V compound semiconductors grown by molecular beam epitaxy (MBE), and have an infrared gap that is determined primarily by the layer thicknesses. With the exceptional control of MBE over layer thicknesses and the ability to grow multiple bandgap structures under compatible growth conditions, T2SL-based multiband IR focal plane arrays (FPAs) are expected to have advantages in spectral control and pixel-to-pixel uniformity over MCT. Additionally, T2SLs have intrinsically higher quantum efficiency than QWIPs, in which the optical selection rules for intersubband transitions forbid the absorption of normally incident light. Here we describe the first results for a T2SL dual band detector with independent long-wave and very-long-wave infrared responsivity bands, with cutoffs of 11.4 and 17 μm respectively. The p-n-p device contains "W"-structured T2SL (WSL) active regions for enhanced band selectivity, owing to the quasi-two-dimensional density of states for WSLs. Photodetector results are demonstrated using a maskset designed to fabricate single-band diodes, 3-terminal dual band devices, and 2-terminal band selectable devices to comply with different dual band FPA read-out architectures.

Citation Download Citation

E. H. Aifer, J. G. Tischler, J. H. Warner, I. Vurgaftman, J. R. Meyer, C. L. Canedy, and E. M. Jackson "Dual band LWIR/VLWIR type-II superlattice photodiodes", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.605228

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available