Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation

H. S. Kim; E. Plis; S. Myers; A. Khoshakhlagh; N. Gautam; M. N. Kutty; Y. D. Sharma; L. R. Dawson; S. Krishna

doi:10.1117/12.826775

9 September 2009 Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation

H. S. Kim, E. Plis, S. Myers, A. Khoshakhlagh, N. Gautam, M. N. Kutty, Y. D. Sharma, L. R. Dawson, S. Krishna

Proceedings Volume 7467, Nanophotonics and Macrophotonics for Space Environments III; 74670U (2009) https://doi.org/10.1117/12.826775
Event: SPIE Optical Engineering + Applications, 2009, San Diego, California, United States

Abstract

We report on surface passivation using SU-8 for type-II InAs/GaSb strained layers superlattice (SLS) detectors with a PIN design operating in mid-wave infrared (MWIR) spectral region (λ_{50% cut-off} ~ 4.4 μm). Material growth and characterization, single pixel device fabrication and testing, as well as focal plane array (FPA) processing are described. High quality strain-balanced SLS material with FWHM of 1st SLS satellite peak of 36 arcsec is demonstrated. The electrical and optical performance of devices passivated with SU-8 are reported and compared with those of unpassivated devices. The dark current density of a single pixel device with SU-8 passivation showed four orders of magnitude reduction compared to the device without any passivation. At 77K, the zero-bias responsivity and detectivity are equal to 1.1 A/W and 4 x 10¹² Jones at 4μm, respectively, for the SU-8 passivated test pixel on the focal plane array.

Citation Download Citation

H. S. Kim, E. Plis, S. Myers, A. Khoshakhlagh, N. Gautam, M. N. Kutty, Y. D. Sharma, L. R. Dawson, and S. Krishna "Improved performance of InAs/GaSb strained layer superlattice detectors with SU-8 passivation", Proc. SPIE 7467, Nanophotonics and Macrophotonics for Space Environments III, 74670U (9 September 2009); https://doi.org/10.1117/12.826775

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