Growth and characterization of beta-Ga<sub>2</sub>O<sub>3</sub> single crystals as transparent conductive substrates for GaN

Kiyoshi Shimamura; Encarnacion G. Villora; Kazuo Aoki; Noboru Ichinose

doi:10.1117/12.601956

28 April 2005 Growth and characterization of beta-Ga₂O₃ single crystals as transparent conductive substrates for GaN (Invited Paper)

Kiyoshi Shimamura, Encarnacion G. Villora, Kazuo Aoki, Noboru Ichinose

Author Affiliations +

Proceedings Volume 5722, Physics and Simulation of Optoelectronic Devices XIII; (2005) https://doi.org/10.1117/12.601956
Event: Integrated Optoelectronic Devices 2005, 2005, San Jose, California, United States

Abstract

Large size single crystals of beta-Ga₂O₃ with 1 inch in diameter have been grown by the floating zone technique. The stable growth conditions have been determined by the examination of the crystal structure. Wafers have been cut and fine polished in the (100), (010) and (001) planes. These were highly transparent in the visible and near UV, as well as electrically conductive, indicating the potential use of beta-Ga₂O₃ as a substrate for optoelectic devices operating in the visible/near UV and with vertical current flow. Epitaxial growth of nitride compounds by the metalorganic vapor phase epitaxy (MOVPE) technique is demonstrated on beta-Ga₂O₃ single crystal substrates. High-quality (0001) GaN epi-layers with a narrow bandedge luminescence are obtained using a low temperature conductive buffer layer. InGaN multi-quantum well (MQW) structures were also successfully grown. The first blue light-emitting diode (LED) on beta-Ga₂O₃ with vertical current injection is demonstrated.

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Kiyoshi Shimamura, Encarnacion G. Villora, Kazuo Aoki, and Noboru Ichinose "Growth and characterization of beta-Ga₂O₃ single crystals as transparent conductive substrates for GaN (Invited Paper)", Proc. SPIE 5722, Physics and Simulation of Optoelectronic Devices XIII, (28 April 2005); https://doi.org/10.1117/12.601956

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