Paper
8 March 2014 Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates
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Abstract
We demonstrate InGaN MQW LEDs on Si substrates have both high performance and low cost structure. The blue LED structures were grown by metal-organic chemical vapor deposition via unique buffer layers on 200 mm-diameter Si (111) substrates. The epitaxial wafers had slightly ex-situ convex bow without micro-cracks. Median and standard deviation of dominant wavelength by photoluminescence measurement were 448.9 nm and 2.0 nm within 4 mm edge exclusion, respectively. XRC FWHMs of GaN (0002) and GaN (10-12) were 341 arcsec and 388 arcsec, respectively, corresponding to be estimated to edge dislocation density of 2.0 × 109 /cm2. The blue LED structures were fabricated by legacy 8-inch (200-mm) Si device equipment without remodeling, because no particular thicker Si wafer was needed for our LED epitaxial growth. Encapsulated blue lamps were fabricated after dicing with 45 × 45 mil2. Median light output power of 641 mW was obtained under injection current of 350 mA at 25 deg-C. The operating voltage was 2.9 V. It corresponds to wall plug efficiency, WPE of 63 %. Stable operation more than 6,000 hours under 450 mA at 85 deg-C was confirmed. These results suggest the InGaN MQW LEDs on the large-scale Si wafers are promising for the near future solid-state lighting.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masaaki Onomura "Highly efficient InGaN MQW LEDs grown on 200 mm Si substrates", Proc. SPIE 8986, Gallium Nitride Materials and Devices IX, 898620 (8 March 2014); https://doi.org/10.1117/12.2041082
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Cited by 1 scholarly publication and 2 patents.
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KEYWORDS
Light emitting diodes

Silicon

Semiconducting wafers

Gallium nitride

Indium gallium nitride

Blue light emitting diodes

Wafer bonding

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