Paper
22 October 2004 Advances in liquid phase epitaxial growth of Hg1-xCdxTe for SWIR through VLWIR photodiodes
Paul LoVecchio, Kwok Wong, Themis Parodos, Stephen P. Tobin, Mark A. Hutchins, Peter W. Norton
Author Affiliations +
Abstract
Hg1-XCdXTe photodiode arrays have assumed a critical importance for systems requiring sensitivity in any one of the infrared bands of interest extending from the SWIR 1-3 micrometer band to the VLWIR >14 micrometer band. As arrays have become larger, system requirements more stringent and cutoff wavelengths longer, more pressure has been placed on improving the Liquid Phase Epitaxial (LPE) Hg1-XCdXTe growth technique at BAE Systems. In this paper we will report on improvements made in each critical aspect of LPE growth, covering the entire range of Hg1-XCdXTe compositions required for photodiodes with cut-off wavelengths ranging from 3 to greater than 14 micrometers. Data presented will demonstrate that continual advances in LPE Hg1-XCdXTe growth techniques at BAE Systems promise high infrared system performance meeting SWIR to VLWIR needs.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Paul LoVecchio, Kwok Wong, Themis Parodos, Stephen P. Tobin, Mark A. Hutchins, and Peter W. Norton "Advances in liquid phase epitaxial growth of Hg1-xCdxTe for SWIR through VLWIR photodiodes", Proc. SPIE 5564, Infrared Detector Materials and Devices, (22 October 2004); https://doi.org/10.1117/12.566470
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Cited by 10 scholarly publications.
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KEYWORDS
Photodiodes

Liquid phase epitaxy

Cadmium

Mercury

Tellurium

Doping

Short wave infrared radiation

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