PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
Hg1-xCdxTe films with x values varying from 0.2 to 0.23 have been grown and characterized. N-type carrier concentrations in the range of 1 X 1015 cm-3 to 3 X 1015 cm-3 have been obtained. Hall effect measurements before and after anneals at 250 degrees Celsius have led to the evaluation of the Hg vacancy concentration in the samples. Dislocation density less than 105 cm-2 and X-ray rocking curve width less than 25 arc- secs measured in some of the films attests to the excellent crystallinity of the material.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Honnavalli R. Vydyanath, Priyalal S. Wijewarnasuriya, Sivalingam Sivananthan, Vaidya Nathan, "Optimization of the MBE growth of Hg1-xCdxTe for advanced infrared applications," Proc. SPIE 3379, Infrared Detectors and Focal Plane Arrays V, (22 July 1998); https://doi.org/10.1117/12.317625