ICP etching of InP and related materials using photoresist as mask

Ligang Deng; Goodyear L. Andrew; Mark Dineen

doi:10.1117/12.520922

12 May 2004 ICP etching of InP and related materials using photoresist as mask

Ligang Deng, Goodyear L. Andrew, Mark Dineen

Proceedings Volume 5280, Materials, Active Devices, and Optical Amplifiers; (2004) https://doi.org/10.1117/12.520922
Event: Asia-Pacific Optical and Wireless Communications, 2003, Wuhan, China

Abstract

New processes using HBr chemistry have been developed for etching InP and related materials using photoresist as a mask in a high ion density inductively coupled plasma system. An etch rate of above 1 micron/min, a selectivity of 14:1 with vertical profile, and smooth etched surface have been achieved. The effects of ICP power, table temperature, chamber pressure and DC bias on etching rate, selectivity, etched profile and surface morphology will be discussed in this paper.

Citation Download Citation

Ligang Deng, Goodyear L. Andrew, and Mark Dineen "ICP etching of InP and related materials using photoresist as mask", Proc. SPIE 5280, Materials, Active Devices, and Optical Amplifiers, (12 May 2004); https://doi.org/10.1117/12.520922

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