How to etch the optimal silicon trench: profile development and process discussion

Wolfgang Pilz; K. Graendorff; Joachim Janes; Joachim Pelka

doi:10.1117/12.56931

1 February 1992 How to etch the optimal silicon trench: profile development and process discussion

Wolfgang Pilz, K. Graendorff, Joachim Janes, Joachim Pelka

Proceedings Volume 1593, Dry Etch Technology; (1992) https://doi.org/10.1117/12.56931
Event: Microelectronic Processing Integration, 1991, San Jose, CA, United States

Abstract

The formation process for trench capacitor etching and its mechanisms in single-crystal silicon with a Cl2/SiCl4 reactive plasma using a multi frequency discharge etch reactor is developed. Trenches are etched using a SiO2 mask on wafers with 150 mm diameter. The influence of process gas flow, pressure, rf-power levels, and temperature is investigated revealing relevant process mechanisms. Attention is paid on the uniformity, reproducibility, and long term stability of the process. Determining the process window by varying the process parameters the changes in trench shapes are investigated giving access to the possibility of a sensitive control of the desired trench profile. The trench profiles achieved under our process conditions meet all requirements demanded by the application in advanced production lines.

Citation Download Citation

Wolfgang Pilz, K. Graendorff, Joachim Janes, and Joachim Pelka "How to etch the optimal silicon trench: profile development and process discussion", Proc. SPIE 1593, Dry Etch Technology, (1 February 1992); https://doi.org/10.1117/12.56931

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