Study of wavelength shift in quantum well structure by MOCVD selective area growth

G. Ru; X. Yu; Yu Sun; Z. B. Chen; Fow-Sen Choa

doi:10.1117/12.543716

15 December 2003 Study of wavelength shift in quantum well structure by MOCVD selective area growth

G. Ru, X. Yu, Yu Sun, Z. B. Chen, Fow-Sen Choa

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543716
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

Bulk InGaAs and InGaAsP and quantum well structure were grown on different oxide pattern. The material composition varies with the width of oxide pattern. The PL peak wavelength of the grown SAG quantum well is determined by the variation of both the material composition and the well width. We have experimentally identified the ratio of the contribution from the two sources, which agree well with the theoretical calculation from the measured thickness changes.

Citation Download Citation

G. Ru, X. Yu, Yu Sun, Z. B. Chen, and Fow-Sen Choa "Study of wavelength shift in quantum well structure by MOCVD selective area growth", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543716

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