Study of N-type Si delta doping on InP and In0.53Ga0.47As

J. Yan; G. Ru; Fow-Sen Choa

doi:10.1117/12.543713

15 December 2003 Study of N-type Si delta doping on InP and In_0.53Ga_0.47As

J. Yan, G. Ru, Fow-Sen Choa

Proceedings Volume 5260, Applications of Photonic Technology 6; (2003) https://doi.org/10.1117/12.543713
Event: Applications of Photonic Technology, 2003, Quebec City, Québec, Canada

Abstract

The method of using Si delta doping to obtain high n-type doping for InP and In_0.53Ga_0.47As lattice matched to InP was studied. With the multiple delta doping, we can obtain ~10¹⁹ cm^-3 N-type doping for both the InP and InGaAs materials by using TMI, PH3, Si2H6 and TEGa precursors in Metalorganic Chemical Vapor Depositions growths. Current results show that the delta doping technique is critical for getting extremely high N-type doping in InP and InGaAs.

Citation Download Citation

J. Yan, G. Ru, and Fow-Sen Choa "Study of N-type Si delta doping on InP and In_0.53Ga_0.47As", Proc. SPIE 5260, Applications of Photonic Technology 6, (15 December 2003); https://doi.org/10.1117/12.543713

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