Influence of free carrier heating on IR light detection in narrow-gap semiconductors

Steponas P. Asmontas; J. Gradauskas; D. Seliuta; A. Suziedelis; E. Sirmulis; V. V. Tetyorkin; A. Urbelis; G. Valusis

doi:10.1117/12.517029

8 August 2003 Influence of free carrier heating on IR light detection in narrow-gap semiconductors

Steponas P. Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, E. Sirmulis, V. V. Tetyorkin, A. Urbelis, G. Valusis

Proceedings Volume 5123, Advanced Optical Devices, Technologies, and Medical Applications; (2003) https://doi.org/10.1117/12.517029
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Our study is concerned with peculiarities of intense CO₂ laser light detection in narrow-gap semiconductor p-n junctions. Samples of InSb, PbTe and HgCdTe were udner investigation. We present experimental evidence of free carrier heating phenomenon in the semiconductors and its influence on photovoltaic signal. We show, that in particular cases, depending on laser light intensity and applied bias, the hot carrier photosignal of opposite polarity may predominate over the ordinary photovoltaic one.

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Steponas P. Asmontas, J. Gradauskas, D. Seliuta, A. Suziedelis, E. Sirmulis, V. V. Tetyorkin, A. Urbelis, and G. Valusis "Influence of free carrier heating on IR light detection in narrow-gap semiconductors", Proc. SPIE 5123, Advanced Optical Devices, Technologies, and Medical Applications, (8 August 2003); https://doi.org/10.1117/12.517029

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