Paper
16 June 2003 Reduction of image placement errors in EPL masks
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Abstract
Minimizing mask-level distortions is critical to ensuring the success of electron projection lithography (EPL) in the sub-65-nm regime. Previous research has demonstrated the importance of controlling the stress in the patterned stencil membranes to minimize image placement distortions. Low-stress, 100-mm diameter EPL mask blanks have been patterned with a layout that simulates the effects of the cross-mask and intra-subfield pattern density gradients found in a realistic circuit design. Extensive IP measurements were made to illustrate how local subfield correction schemes can be used to reduce all mask-level distortions (regardless of pattern type) to less than 15 nm (3s). Combining membrane stress control with the use of repeatable and identical reticle chucking is expected to reduce EPL mask-level distortions to the values that will be needed for the 65-nm design node.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Obert R. Wood II, Phillip L. Reu, Roxann L. Engelstad, Edward G. Lovell, Michael J. Lercel, Carey W. Thiel, Mark S. Lawliss, and R. Scott Mackay "Reduction of image placement errors in EPL masks", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.490136
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Reticles

Silicon

Semiconducting wafers

Mask making

Metrology

Electron beam lithography

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