Improvement of resist pattern collapse

Manabu Watanabe; Yoichi Tomo; Masaki Yamabe; Yukio Kiba; Keiichi Tanaka; Ryoichiro Naito

doi:10.1117/12.484978

16 June 2003 Improvement of the resist pattern collapse

Manabu Watanabe, Yoichi Tomo, Masaki Yamabe, Yukio Kiba, Keiichi Tanaka, Ryoichiro Naito

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484978
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In this study, we investigated resist pattern collapse during the resist development process. We evaluated the effect of a simple improvement such as rinse-liquid sequencing and rinsing using surfactants. First, we controlled the wafer spinning speed during the rinse-liquid flow step to reduce liquid flow shock. Using this approach, we obtained a 110-nm L/S (line and space) structure with no pattern collapse. However, this technique has only a small effect on preventing pattern collapse with sub-100-nm devices. By using a rinse process with a surfactant, we could control pattern collapse with 100-nm L/S or smaller patterns. Finally, we have succeeded in controlling pattern collapse of 70-nm L/S patterns (aspects ratio of 4.6) using a surfactant during the rinse process. These two simple methods are a significant improvement over conventional rinse processes. These process improvements are available for 90-nm (and smaller) design rules and are applicable for a single layer resists.

Citation Download Citation

Manabu Watanabe, Yoichi Tomo, Masaki Yamabe, Yukio Kiba, Keiichi Tanaka, and Ryoichiro Naito "Improvement of the resist pattern collapse", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484978

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