Paper
16 June 2003 Supercritical resist dry technique for electron-beam projection lithography (EPL)
George Petricich, Kohei Suzuki, Jun Munemasa, Tetsuya Yoshikawa, Nobuyuki Kawakami, Sumito Shimizu, Manabu Watanabe
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Abstract
A single-layer resist process for a technology nodes at or below 65nm utilizing a novel supercritical dry technique and Electron-beam Projection Lithography (EPL) technology is discussed. EPL is inhernelty advantageous in imaging sub-65nm geometries with high aspect ratios. Pattern collapse of these high aspect ratio (resist) structures, however, is a critical and limiting issue. By employing our novel supercritical carbon dioxide (SCCO2) dry technique, 70nm and 60nm lines and spaces patterns with a resist thickness of 250nm, whose aspect ratio is 3.5 and 4.2 respectively, have been successfully demonstrated without resist pattern collapse.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
George Petricich, Kohei Suzuki, Jun Munemasa, Tetsuya Yoshikawa, Nobuyuki Kawakami, Sumito Shimizu, and Manabu Watanabe "Supercritical resist dry technique for electron-beam projection lithography (EPL)", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484990
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Cited by 6 scholarly publications.
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KEYWORDS
Liquids

Etching

Single crystal X-ray diffraction

Photoresist processing

Plasma etching

Capillaries

Carbon dioxide

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