Paper
19 November 2003 Amplified spontaneous emission in e-beam induced LiF:F2 waveguides
Rosamaria M. Montereali, Giancarlo C. Righini, Stefano Pelli, E. Burattini, Antonio Grilli, M. Piccinini
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.528310
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
Electron-beam lithography techniques allow realizing channel waveguides based on laser-active color centers in lithium fluoride (LiF) emitting in the visible. Amplified spontaneous emission (ASE) of red light from F2 defects has been observed in these confining structures: the appreciable values of the gain coefficient, several cm-1, with an exciting power density of few mW/cm2, makes LiF a good candidate for the realization of active integrated optical devices.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rosamaria M. Montereali, Giancarlo C. Righini, Stefano Pelli, E. Burattini, Antonio Grilli, and M. Piccinini "Amplified spontaneous emission in e-beam induced LiF:F2 waveguides", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.528310
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KEYWORDS
Waveguides

Laser induced fluorescence

Crystals

Luminescence

Channel waveguides

Argon ion lasers

Lithography

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