Resistivity dependence on Zn concentration in semi-insulating (Cd,Zn)Te

Michael Fiederle; Alex Fauler; Vladimir N. Babentsov; Jan Franc; Klaus Werner Benz

doi:10.1117/12.450829

10 January 2003 Resistivity dependence on Zn concentration in semi-insulating (Cd,Zn)Te

Michael Fiederle, Alex Fauler, Vladimir N. Babentsov, Jan Franc, Klaus Werner Benz

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.450829
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The resistivity dependence on Zn concentration had been investigated in semi-insulating (Cd,Zn)Te crystals grown by the vertical Bridgman method. A coorelation between the zinc concentration and the resistivity distribution could be found. The obtained resistivity was in the interval of 2 ×10⁹-10¹⁰ Ω cm as expected from the model of compensation. The main deep compensating levels detected by Photo Induced Current Transient Spectroscopy (PICTS) were at 0.64 ± 0.02 eV and close the middle of the band gap at 0.80 ± 0.02 eV.

Citation Download Citation

Michael Fiederle, Alex Fauler, Vladimir N. Babentsov, Jan Franc, and Klaus Werner Benz "Resistivity dependence on Zn concentration in semi-insulating (Cd,Zn)Te", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.450829

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