Mask availability for next-generation lithography

Michael J. Lercel; Emily Fisch; Kenneth C. Racette; Mark Lawliss; Carey T. Williams; Louis Kindt; Chester Huang

doi:10.1117/12.479342

16 August 2002 Mask availability for next-generation lithography

Michael J. Lercel, Emily Fisch, Kenneth C. Racette, Mark Lawliss, Carey T. Williams, Louis Kindt, Chester Huang

Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479342
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany

Abstract

The Next Generation Lithography (NGL) Mask Center of Competency (MCoC) has been developing mask technology to support all of the major next generation lithographies for several years. Cross-cutting process development has been applied to generate progress in both the membrane and reflective mask formats. The mask technology has been developed to early capability stage for all of the mask formats. Proximity x-ray masks, although only for certain niche applications, are a very developed mask format. This information has been used to produce electron beam projection masks, in both continuous membrane and stencil formats, and extreme ultraviolet lithography masks. In this paper, we discuss the status of the lithography technology development and the obstacles that remain between the current early development capability and the availability for manufacturing.

Citation Download Citation

Michael J. Lercel, Emily Fisch, Kenneth C. Racette, Mark Lawliss, Carey T. Williams, Louis Kindt, and Chester Huang "Mask availability for next-generation lithography", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479342

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KEYWORDS

Photomasks

Inspection

Extreme ultraviolet lithography

Lithography

X-rays

Chromium

Etching

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