Optical anisotropy of nanostructured silicon films studied by Fourier transform infrared spectroscopy

Lyubov P. Kuznetsova; Aleksandra I. Efimova; Leonid A. Golovan; Viktor Yu. Timoshenko; Pavel K. Kashkarov

doi:10.1117/12.468970

29 May 2002 Optical anisotropy of nanostructured silicon films studied by Fourier transform infrared spectroscopy

Lyubov P. Kuznetsova, Aleksandra I. Efimova, Leonid A. Golovan, Viktor Yu. Timoshenko, Pavel K. Kashkarov

Proceedings Volume 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures; (2002) https://doi.org/10.1117/12.468970
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus

Abstract

Electrochemically nanostructured Si films with surface orientation (110) prepared at different current density were investigated by Fourier transform infrared spectroscopy. The spectra exhibit beats of interference fringes arisen from the summation of intensities of ordinary and extraordinary waves which interfere in the film. The investigated films are shown to exhibit properties of a negative uniaxial crystal (n_o > n_e) with optical axis lying in the surface plane along [001] direction. The value of birefringence reaches 18% for nanostructured Si films with porosity of 80%. Experimental data agree with calculations based on the effective media approximation for anisotropically spaced Si nanocrystals.

Citation Download Citation

Lyubov P. Kuznetsova, Aleksandra I. Efimova, Leonid A. Golovan, Viktor Yu. Timoshenko, and Pavel K. Kashkarov "Optical anisotropy of nanostructured silicon films studied by Fourier transform infrared spectroscopy", Proc. SPIE 4748, ICONO 2001: Fundamental Aspects of Laser-Matter Interaction and Physics of Nanostructures, (29 May 2002); https://doi.org/10.1117/12.468970

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KEYWORDS

Silicon

Picosecond phenomena

Refractive index

Crystals

Birefringence

Nanostructuring

FT-IR spectroscopy

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