Paper
13 November 2001 Tantalum oxide thin film ionic conductors for monolithic electrochromic devices
Michael G. Hutchins, N. S. Butt, A. John Topping, Jose M. Gallego, Paul E. Y. Milne, Dawn Jeffrey, Ian D. Brotherston
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Abstract
Tantalum oxide (Ta2O5) thin films prepared by reactive magnetron sputtering are investigated for their potential use as the ionic conducting layer in all solid state monolithic electrochromic devices. The paper focuses on the influence of Ta2O5 coatings on the electrochromic response of amorphous tungsten oxide (a-WO3), the methods employed for charging during monolithic device fabrication and associated charge losses caused by subsequent deposition of the component layers of monolithic (all solid state) electrochromic devices. The dependence of the electrochromic response and related charge loss processes have been studied for Ta2O5 films of different thicknesses prepared on a-WO3 electrochromic films.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Michael G. Hutchins, N. S. Butt, A. John Topping, Jose M. Gallego, Paul E. Y. Milne, Dawn Jeffrey, and Ian D. Brotherston "Tantalum oxide thin film ionic conductors for monolithic electrochromic devices", Proc. SPIE 4458, Solar and Switching Materials, (13 November 2001); https://doi.org/10.1117/12.448239
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Cited by 4 scholarly publications.
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KEYWORDS
Oxides

Tantalum

Electrodes

Ions

Thin films

Thin film devices

Glasses

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