Paper
10 August 2001 Growth and dielectric properties of Ca4GdO(BO3)3 single crystals
Andrzej Klos, Anna Pajaczkowska, Czeslaw Pawlaczyk, Ewa Markiewicz
Author Affiliations +
Abstract
Single crystals of Ca4GdO(BO3)3 have ben grown from a melt by the Czochralski puling method making use seed orientation. Defects, like dislocation were investigated. Chemical methods were developed on various planes of crystals, in order to reveal the nature and the distribution of these defects. Dielectric measurements in frequency range 20Hz-13MHz in three main crystallographic directions were carried out. The values of elastic and piezoelectric coefficients were calculated for the first mode of piezoelectric vibration in each direction.
© (2001) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andrzej Klos, Anna Pajaczkowska, Czeslaw Pawlaczyk, and Ewa Markiewicz "Growth and dielectric properties of Ca4GdO(BO3)3 single crystals", Proc. SPIE 4412, International Conference on Solid State Crystals 2000: Growth, Characterization, and Applications of Single Crystals, (10 August 2001); https://doi.org/10.1117/12.435861
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Cited by 3 scholarly publications.
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KEYWORDS
Crystals

Dielectrics

Etching

Calcium

Computing systems

Gadolinium

Ions

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