Photoelectrical properties of Hg1-xCdxTe epitaxial films and photodiodes with composition grading

Z. F. Ivasiv; Vladimir V. Tetyorkin

doi:10.1117/12.417769

22 February 2001 Photoelectrical properties of Hg_1-xCd_xTe epitaxial films and photodiodes with composition grading

Z. F. Ivasiv, Vladimir V. Tetyorkin

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417769
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

The photocurrent spectra are investigated in Hg_1-xCd_xTe liquid phase epitaxy (LPE) films and photodiodes of n + -p type on their base with composition gradient. The LPE films were grown on CdTe and CdZnTe single crystal substrates. The transformation of the photocurrent spectra caused by the composition gradient is studied both experimentally and theoretically. The analytical expressions for the spectral dependencies of the photocurrent are derived from the solution of the one-dimensional continuity equation. The calculation of the photocurrent spectra are made in which the nonparabolicity of the energy bands HgCdTe is taking into account.

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Z. F. Ivasiv and Vladimir V. Tetyorkin "Photoelectrical properties of Hg_1-xCd_xTe epitaxial films and photodiodes with composition grading", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417769

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KEYWORDS

Liquid phase epitaxy

Photodiodes

Mercury cadmium telluride

Photoresistors

Absorbance

Absorption

Crystals

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