Laser-assisted evaporation and deposition of MnxHg1-xTe epitaxial layers

Volodymyr Kavych; Leonid G. Mansurov; Mariya Lozynska; Volodymyr K. Pysarevsky

doi:10.1117/12.417799

22 February 2001 Laser-assisted evaporation and deposition of Mn_xHg_1-xTe epitaxial layers

Volodymyr Kavych, Leonid G. Mansurov, Mariya Lozynska, Volodymyr K. Pysarevsky

Proceedings Volume 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics; (2001) https://doi.org/10.1117/12.417799
Event: Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, 2000, Kiev, Ukraine

Abstract

Mn_xHg_1-xTe (x equals 0.1 - 0.13) layers were deposited on CdTe (111) substrates from Mn_xHg_1-xTe (average composition of x equals 0.14) by a pulsed YAG:Nd laser with scanning of the laser beam over the source material. Layers were deposited at different substrate temperatures (from the room temperature to 250 degrees Celsius). It has been established that epitaxial growth of Mn_xHg_1-xTe layers occurs in the narrow range of substrate temperature from 180 to 200 degrees Celsius. As-grown layers are n-type with electron mobility of (mu) equals (0.7-2.8)X10³ cm²/Vc and electron concentration of n equals(0.6 - 3.0)X10¹⁷ cm^-3 at 77K. Thermal treatment in Hg overpressure has been founded to almost unchange the carrier concentration of the layers. The abrupt increase of the carrier mobility (up to 1.5 order of magnitude) is achieved after two-stage heat treatment in Hg overpressure.

Citation Download Citation

Volodymyr Kavych, Leonid G. Mansurov, Mariya Lozynska, and Volodymyr K. Pysarevsky "Laser-assisted evaporation and deposition of Mn_xHg_1-xTe epitaxial layers", Proc. SPIE 4355, Fifth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (22 February 2001); https://doi.org/10.1117/12.417799

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