Cd1-xMnxTe/CdyHg1-yTe heterostructures: structure and optical properties

Aleksandr I. Vlasenko; Vladimir N. Babentsov; Z. K. Vlasenko; V. V. Kremenitskiy; A. V. Ponedilok; Igor A. Rudyj

doi:10.1117/12.306259

20 April 1998 Cd_1-xMn_x e/Cd_yHg_1-yTe heterostructures: structure and optical properties

Aleksandr I. Vlasenko, Vladimir N. Babentsov, Z. K. Vlasenko, V. V. Kremenitskiy, A. V. Ponedilok, Igor A. Rudyj

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306259
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

A graded gap Cd_yHg_1-yTe layers grown by ISO VPE technique on the Cd_1-xMn_xTe substrate were comprehensively studied by scanning electron microscope, X ray microanalyzer, IR transmission method. The influence of the initial stage of Cd_yHg_1-yTe layer growth on the defect structure near the geometrical boundary of the substrate was shown. The possible influence of defects on this boundary on the band structure is shown. The possibility of two steps annealing of the photosensitive Cd_yHg_1-yTe layer was demonstrated numerically aiming the decreasing of the residual native donors, namely tellurium untisites concentration.

Citation Download Citation

Aleksandr I. Vlasenko, Vladimir N. Babentsov, Z. K. Vlasenko, V. V. Kremenitskiy, A. V. Ponedilok, and Igor A. Rudyj "Cd_1-xMn_x e/Cd_yHg_1-yTe heterostructures: structure and optical properties", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306259

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