MEMS variable capacitor for one-chip rf front end

Seonho Seok; Chul Nam; KukJin Chun

doi:10.1117/12.404909

20 October 2000 MEMS variable capacitor for one-chip rf front end

Seonho Seok, Chul Nam, KukJin Chun

Proceedings Volume 4230, Micromachining and Microfabrication; (2000) https://doi.org/10.1117/12.404909
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore

Abstract

Area-varying tunable MEMS (MicroElectroMechanical Systems) capacitor with 608 comb fingers is developed. The 6 um-thick single crystal silicon MEMS structure is bonded to the pyrex glass substrate using the glass-silicon anodic bonding technique and chemical mechanical polish to make the designed capacitor. The pyrex glass is used as a substrate instead of the silicon for reducing the RF losses through the substrate. The measured capacitor shows the nominal capacitance of 1.4 pF, Q-factor of 4 at 1 GHz. The capacitor model is also developed and proved by Serenade software of Ansoft Corporation.

Citation Download Citation

Seonho Seok, Chul Nam, and KukJin Chun "MEMS variable capacitor for one-chip rf front end", Proc. SPIE 4230, Micromachining and Microfabrication, (20 October 2000); https://doi.org/10.1117/12.404909

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