Paper
20 October 2000 200/300-mm Micrascan IV 248-nm system for high-throughput and tight CD control applications
Pradeep K. Govil, Javed Sumra, James G. Tsacoyeanes, Keith W. Andresen, William Dornfeld, Marie-Christine Zolcinski-Couet, Peter J. Baumgartner, Geoffrey O'Connor, Zoltan Gyarfas
Author Affiliations +
Proceedings Volume 4226, Microlithographic Techniques in Integrated Circuit Fabrication II; (2000) https://doi.org/10.1117/12.404856
Event: International Symposium on Microelectronics and Assembly, 2000, Singapore, Singapore
Abstract
Micrascan (MS) IV is designed to provide superior Critical Dimension (CD) control & overlay performance at very high wafer throughputs for both 200 and 300mm wafers at low cost of ownership. This new system, targeted for sub-critical applications, includes SVGL's new flexible cross-performance platform and improved 0.6NA Catadioptric Projection Optics for better resolution and overlay. A new Laser Illumination System (LIS), capable of high doses at high throughput, uses a 2 kHz semi line narrowed KrF laser. SVGL has demonstrated its MS IV 248nm DUV optical design for successful insertion at the 180nm Lithography node. In this paper, modeled capabilities of SVGL's DUV optical design for both group and isolated lines will be presented. The performance potential with both conventional and enhanced illumination will be considered. Data from SVGL's Micrascan systems, illustrating Linewidth control, Depth Of Focus (DOF) performance for 180nm Group and Isolated Features, and overlay performance potential will be given. The Cross performance platform wiht its high throughput capabilities will be discussed.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Pradeep K. Govil, Javed Sumra, James G. Tsacoyeanes, Keith W. Andresen, William Dornfeld, Marie-Christine Zolcinski-Couet, Peter J. Baumgartner, Geoffrey O'Connor, and Zoltan Gyarfas "200/300-mm Micrascan IV 248-nm system for high-throughput and tight CD control applications", Proc. SPIE 4226, Microlithographic Techniques in Integrated Circuit Fabrication II, (20 October 2000); https://doi.org/10.1117/12.404856
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KEYWORDS
Semiconducting wafers

Lithography

Data modeling

Optical alignment

Control systems

Reticles

Critical dimension metrology

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