Stress engineering of SOI silicon stencil masks by boron doping concentration

Artur Degen; Jens Voigt; Martin Kratzenberg; Feng Shi; Joerg Butschke; Hans Loeschner; Rainer Kaesmaier; Albrecht Ehrmann; Ivo W. Rangelow

doi:10.1117/12.390076

21 July 2000 Stress engineering of SOI silicon stencil masks by boron doping concentration

Artur Degen, Jens Voigt, Martin Kratzenberg, Feng Shi, Joerg Butschke, Hans Loeschner, Rainer Kaesmaier, Albrecht Ehrmann, Ivo W. Rangelow

Author Affiliations +

Proceedings Volume 3997, Emerging Lithographic Technologies IV; (2000) https://doi.org/10.1117/12.390076
Event: Microlithography 2000, 2000, Santa Clara, CA, United States

Abstract

Ion Projection Lithography (IPL) is a most promising candidate for next generation IC technology. A critical aspect of IPL is the development of stencil masks with proper stress control. Thus, precise stress measurement of stencil mask membranes is mandatory. The work presented in this paper is based on the well known bulging method. The Silicon lattice contraction by boron doping was investigated experimentally on SOI 150 mm masks with 3 micrometer thick membranes of 126 mm diameter. The measured Si membrane stress vs. boron doping was compared with theoretical models. This comparison shows that a three dimensional model of stress formation is not appropriate and thus the dependence of stress on boron doping concentration better follows linear model.

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Artur Degen, Jens Voigt, Martin Kratzenberg, Feng Shi, Joerg Butschke, Hans Loeschner, Rainer Kaesmaier, Albrecht Ehrmann, and Ivo W. Rangelow "Stress engineering of SOI silicon stencil masks by boron doping concentration", Proc. SPIE 3997, Emerging Lithographic Technologies IV, (21 July 2000); https://doi.org/10.1117/12.390076

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