Comparison of wet and dry gate oxides for SiC MOSFETs

Philip G. Tanner; Sima Dimitrijev; H. Barry Harrison

doi:10.1117/12.364498

1 October 1999 Comparison of wet and dry gate oxides for SiC MOSFETs

Philip G. Tanner, Sima Dimitrijev, H. Barry Harrison

Proceedings Volume 3892, Device and Process Technologies for MEMS and Microelectronics; (1999) https://doi.org/10.1117/12.364498
Event: Asia Pacific Symposium on Microelectronics and MEMS, 1999, Gold Coast, Australia

Abstract

SiC MOSFETs are currently being developed for use in RF, microwave, and switch mode power supply applications, but the process conditions required for high quality and reliable oxides are not yet optimized. This paper present result of a fundamental study comparing wet and dry oxidation of SiC. Equivalent 4H-SiC substrates were cleaned and prepared under identical conditions before oxides were grown in either wet or dry ambients, followed by an inert gas anneal. Capacitance-voltage curves show increased net effective charge and density of interface states in the upper half of the SiC bandgap due to wet oxidation of n-SiC compared to dry oxidation. In contrast, wet oxidation of p- SiC reduces the density of donor-like states in the lower half of the SiC bandgap compared to dry oxidation. Current- voltage curves reveal more low-field leakage as a result of wet oxidation. When oxides on n-type substrates are stressed at room temperature using a dielectric field strength of 9MV/cm, increased hole trapping is seen at the oxide- semiconductor interface of wet oxide devices compared to dry oxide devices. Stressing at a higher temperature and lower field results in similar changes in net effective charge fort he two oxides, although the wet oxide shows considerably more increase in low-field leakage current.

Citation Download Citation

Philip G. Tanner, Sima Dimitrijev, and H. Barry Harrison "Comparison of wet and dry gate oxides for SiC MOSFETs", Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); https://doi.org/10.1117/12.364498

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