FET on ultrathin SOI (fabrication and research)

Olga V. Naumova; Irina V. Antonova; Vladimir P. Popov; Yury V. Nastaushev; Tatiana A. Gavrilova; Marina M. Kachanova; Litvin V. Litvin; Alexander L. Aseev

doi:10.1117/12.558394

28 May 2004 FET on ultrathin SOI (fabrication and research)

Olga V. Naumova, Irina V. Antonova, Vladimir P. Popov, Yury V. Nastaushev, Tatiana A. Gavrilova, Marina M. Kachanova, Litvin V. Litvin, Alexander L. Aseev

Author Affiliations +

Proceedings Volume 5401, Micro- and Nanoelectronics 2003; (2004) https://doi.org/10.1117/12.558394
Event: Micro- and Nanoelectronics 2003, 2003, Zvenigorod, Russian Federation

Abstract

Some problems arisen from the fabrication of the nano-scale transistors are discussed: modification of the silicon-on-insulator (SOI) under (a) thinning procedure (multiplied oxidation), (b) structuring of the silicon nanolayers. Two types of SOI field effect transistors (FETs) were realized: in-plane-gate FET (IPGFET) with 40 nm minimum channel size and multi-channel top-gate FET on silicon on-insulator. The multi-channel 3D-gate FET fabricated on the uniform doped silicon layers are found to be the most advantageous variant of design.

Citation Download Citation

Olga V. Naumova, Irina V. Antonova, Vladimir P. Popov, Yury V. Nastaushev, Tatiana A. Gavrilova, Marina M. Kachanova, Litvin V. Litvin, and Alexander L. Aseev "FET on ultrathin SOI (fabrication and research)", Proc. SPIE 5401, Micro- and Nanoelectronics 2003, (28 May 2004); https://doi.org/10.1117/12.558394

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