Paper
9 September 1999 Cyclotron resonance light holes amplification in optically pumped semiconductors
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Proceedings Volume 3828, Terahertz Spectroscopy and Applications II; (1999) https://doi.org/10.1117/12.361047
Event: Industrial Lasers and Inspection (EUROPTO Series), 1999, Munich, Germany
Abstract
Effect of amplification of far-IR radiation on light hole cyclotron resonance in Ge and InSb under the optical pumping by CO2 laser radiation has been calculated using the quantum mechanical model of valence band states in strong magnetic field. The model is based on 6 by 6 Luttinger Hamiltonian for valence band including split-off hole subband. We have found strong resonant dependence of pumping efficiency on magnetic field that is explained by quantum resonance of intersubband absorption of CO2 laser radiation. It was shown that at the optimal magnetic fields the cross-section of the gain can reach 2 X 10-14 cm2 for pumping power density 2 divided by 4 MW/cm2.
© (1999) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Dmitry B. Veksler, Andrei V. Muravjov, and Valery N. Shastin "Cyclotron resonance light holes amplification in optically pumped semiconductors", Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); https://doi.org/10.1117/12.361047
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KEYWORDS
Absorption

Magnetism

Germanium

Chromium

Carbon dioxide lasers

Optical pumping

Phonons

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